scholarly journals Monte Carlo simulation of InAs HEMTs considering strain and quantum confinement effects

2013 ◽  
Vol 454 ◽  
pp. 012036 ◽  
Author(s):  
Akira Endoh ◽  
Issei Watanabe ◽  
Akifumi Kasamatsu ◽  
Takashi Mimura
2008 ◽  
Vol 55 (12) ◽  
pp. 3450-3458 ◽  
Author(s):  
Marie-Anne Jaud ◽  
Sylvain Barraud ◽  
JÉrÔme Saint-Martin ◽  
Arnaud Bournel ◽  
Philippe Dollfus ◽  
...  

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 21-27
Author(s):  
R. W. Kelsall ◽  
A. J. Lidsey

The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self-consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states. Comparisons between the new model and a standard semi-classical Monte Carlo model are presented for a 0.1 μm gate-length In0.52Al0.48As/In0.53 Ga0.47As/InP MODFET. Whilst the quantum model yields minor corrections in the predicted output characteristics, it is found that these results can be achieved without repeated iterations of the Schrodinger equation.


2011 ◽  
Vol 83 (24) ◽  
Author(s):  
O. Demichel ◽  
V. Calvo ◽  
P. Noé ◽  
B. Salem ◽  
P.-F. Fazzini ◽  
...  

2016 ◽  
Vol 120 (32) ◽  
pp. 18333-18339 ◽  
Author(s):  
Prashant Kumar ◽  
Chinnadurai Muthu ◽  
Vijayakumar C. Nair ◽  
K. S. Narayan

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