scholarly journals In-situ surface contamination removal and cool-down process of the DEAP-3600 experiment

2016 ◽  
Vol 718 ◽  
pp. 042025 ◽  
Author(s):  
Pietro Giampa ◽  
2002 ◽  
Vol 41 (3P2) ◽  
pp. 551-554 ◽  
Author(s):  
Charles A. Gentile ◽  
John J. Parker ◽  
Stewart J. Zweben

1992 ◽  
Vol 23 (5) ◽  
pp. 273-290 ◽  
Author(s):  
Jan-Gunnar Winther

Landsat-5 Thematic Mapper (TM) reflectances recorded i May 1989 from a mountainous catchment at Kvikne, Norway, are analyzed and compared with simultaneously measured in situ albedo. The satellite-registered shortwave snow albedo comparable to bare ground albedo and as low as 0.19 was found in areas where the snow was highly metamorphosed and heavily blackened by organic material. However, the contrast between snow and snow-free areas can be strongly improved by using a normalized TM Band 2-5 difference image. While TM Band 2 shows varying degrees of snow surface contamination within the study area, the normalized TM Band 2-5 difference image is not affected by impurities. Further, a normalized TM Band 2-4 difference image indicates that about one third of the variability in TM Band 4 is caused by effective snow grain size variations while the remaining is a result of surface contamination. Finally, the satellite reflectances have been corrected for atmospheric absorption and scattering present on the day of the satellite overpass.


2012 ◽  
Author(s):  
J. Sporre ◽  
D. Elg ◽  
D. Andruczyk ◽  
T. Cho ◽  
D. N. Ruzic ◽  
...  

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Santangelo ◽  
P. Lanza ◽  
O. Viscuso ◽  
C. Magro ◽  
A. Scandurra ◽  
...  

ABSTRACTIn situ etching of native Si02 by Ar+ ion bombardment before metal sputter deposition can increase the contact resistance of the metal-semiconductor contact. This is commonly attributed to surface contamination produced by various mechanisms or to etch-induced surface damage. In this paper, in order to elucidate the cause of the increase of contact resistance, we have studied (Al-Si)/n+Si contacts prepared by various treatments of the Si surface. We attribute the higher postalloy contact resistance of the sputter etched contacts to the existence of an Al doped layer which formation was induced by the preexisting disordered layer created by the Ar+ ion bombardment.


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