scholarly journals Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

2016 ◽  
Vol 747 ◽  
pp. 012085 ◽  
Author(s):  
Y S Pavlov ◽  
A M Surma ◽  
P B Lagov ◽  
Y L Fomenko ◽  
E M Geifman
Keyword(s):  
Electron Beam ◽  
Semiconductor Devices ◽  
Bipolar Semiconductor

Semiconductor Device Radiation Damage in TEM

2020 ◽  
Author(s):  
Timothy Yeow ◽  
Dong Tang ◽  
Ioannis Alexandrou ◽  
Guoda Lian ◽  
Steve Boetttcher ◽  
...  
Keyword(s):  
Electron Beam ◽  
Radiation Damage ◽  
Semiconductor Device ◽  
Metal Layer ◽  
Semiconductor Devices ◽  
Beam Radiation ◽  
Electron Beam Radiation ◽  
High Tension ◽  
Radiation Damages ◽  
Technology Nodes

Abstract Transmission electron microscopy (TEM) is a widely used technique in semiconductor device failure analysis. A common challenge in TEM is electron radiation damage, which can generate an uncertainty for correct analysis. This paper reports a study of the electron beam-radiation damages in small technology nodes semiconductor devices relating to the FINFET sidewall and metal layer. The study is performed at three different high tensions at 200kV, 60kV, and 30kV to compare the electron beam-radiation damages. The paper demonstrates that using lower high tension is preferred for minimizing the electron beam-radiation damage in advanced semiconductor devices. However, it also shows that the lowest high tension might not always be suitable for certain semiconductor device regions.

SEMDEM — educational software for bipolar semiconductor devices

1996 ◽  
Vol 27 (2-3) ◽  
pp. 121-129
Author(s):  
Marek Turowski ◽  
Zbigniew Lisik ◽  
Zenon J. Pudlowski
Keyword(s):  
Educational Software ◽  
Semiconductor Devices ◽  
Bipolar Semiconductor
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