scholarly journals Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment

2020 ◽  
Vol 15 (04) ◽  
pp. C04005-C04005
Author(s):  
M. Menichelli ◽  
M. Boscardin ◽  
M. Crivellari ◽  
J. Davis ◽  
S. Dunand ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Radiation Environment ◽  
High Dose ◽  
Silicon Detectors ◽  
Particle Detection ◽  
Flux Monitoring ◽  
Hydrogenated Amorphous ◽  
Dose Radiation

Drift time limited hydrogenated amorphous silicon detectors with picosecond response times

1990 ◽  
Vol 67 (8) ◽  
pp. 3888-3890
Author(s):  
W. Beinstingl ◽  
P. Sawadcitang ◽  
R. A. Höpfel ◽  
E. Gornik
Keyword(s):  
Amorphous Silicon ◽  
Response Times ◽  
Drift Time ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Detectors ◽  
Hydrogenated Amorphous

Annealing of Ion-Implanted Hydrogenated Amorphous Silicon: Stable and Removable Damage

1993 ◽  
Vol 297 ◽  
Author(s):  
A.J.M. Berntsen ◽  
P.A. Stolk ◽  
W.F. VAN DER WEG ◽  
F.W. Saris
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Hydrogenated Amorphous Silicon ◽  
Structural Disorder ◽  
High Dose ◽  
Angle Variation ◽  
Reflection And Transmission ◽  
Hydrogenated Amorphous ◽  
Average Bond ◽  
High Dose Implantation

Hydrogenated amorphous silicon (a-Si:H) films were irradiated with 1-MeV Si+ ions. The accumulation and annealing of ion damage was investigated by Raman scattering, optical reflection and transmission, and conductivity measurements. For damage levels up to 0.003 displacements per atom, electrical defects are created with no measurable effect on the structural properties. These defects can be completely annealed out at 180°C. Further irradiation results in an increase in the average bond-angle variation in the films. This structural disorder causes a decrease of the optical band gap with 0.46 eV. The structural changes caused by high-dose implantation can not be reversed by annealing at 180° C, which results in the formation of anneal-stable electrical defects.

Vertical integration of hydrogenated amorphous silicon devices on CMOS circuits

2005 ◽  
Vol 869 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
C. Ballif ◽  
A. Shah ◽  
N. Blanc ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Vertical Integration ◽  
Hydrogenated Amorphous Silicon ◽  
Particle Detection ◽  
Chip Area ◽  
Silicon Devices ◽  
Readout Circuits ◽  
Cmos Imagers ◽  
Cmos Chip ◽  
Hydrogenated Amorphous

AbstractMonolithic integration of sensing devices usually requires sharing the CMOS chip floor space between sensors and their readout electronics. Vertical integration of the sensor on top of the electronics allows one to have the full chip area dedicated to sensing. For light detection, the deposition of hydrogenated amorphous silicon (a-Si:H) photodiodes on top of CMOS readout circuits offers several advantages compared to standard CMOS imagers. The issues regarding the design of a-Si:H photodiodes, their integration and the influence of the CMOS chip design (i.e. its surface morphology) on a-Si:H diode performance are discussed. Examples of TFA sensors for vision and particle detection are also presented.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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