Structure and properties of the surface layer of zirconium-niobium alloy subjected to high-dose implantation with 10B+ boron isotope ions

The creation of layers implanted with boron isotope 10B on the elements of the core of a nuclear reactor can, due to the anomalously large neutron capture cross-section, provide a decrease in the reactivity of the reactor at the beginning of the company for its operation. The aim of this work is to study the effect of high-dose implantation with 10B + boron isotope ions (ion energy 22 keV, exposure doses from 1×1016 to 7×1016 ion/cm2) on the structure and properties of the surface of E110 alloy samples. It was found that implantation with 10B+ boron ions with an energy of 22 keV at a dose of 7×1016 ions/cm2 leads to an increase in the surface microhardness from 3 GPa for the initial one to 3.7 GPa for the implanted sample. It was found that the corrosion rate of E110 alloy samples in 1% HF solution after implantation (ion energy 10B + 22 keV, dose 7×1016 ion/cm2) is 1.2-1.4 times lower than for the initial alloy. It is shown that the implantation of the E110 alloy with 10B + boron ions is accompanied by the formation of a subgrain structure with dimensions 100-200 nm in the surface layer, an increase in the scalar dislocation density, and the release of nanosized 1.8-2.3 nm zirconium boride particles.

Effect implantation of silver ions on patterns of wear of titanium VT1-00

The results of the technical titanium VT1-00 wear resistance before and after ion implantation by silver with different grain size after intense plastic deformation are presented. It is shown that the increase in the grinding degree of the titanium VT1-00 original grain is accompanied by increase in the intensity of wear during friction. It is established that high-dose implantation of silver ions is effective to increase the wear resistance of large-grain structure titanium VT1-00. This is due to the formation on the friction surface of secondary structures containing fine-dispersed intermetaloids based on titanium and silver.

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.