Role of oxygen flow rate on the structural and optical properties of copper oxide thin films grown by reactive magnetron sputtering

2015 ◽  
Vol 90 (2) ◽  
pp. 219-224 ◽  
Author(s):  
M Ali ◽  
C R Gobinner ◽  
D Kekuda
2014 ◽  
Vol 979 ◽  
pp. 448-451 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao

Tantalum oxide (Ta2O5) thin films have been deposited on glass substrates and silicon wafers (100) by dc reactive magnetron sputtering and with a 99.995% pure tantalum target. The effect of the oxygen flow rate on the crystallinity and optical properties were investigated. The films were characterized by X-ray diffraction patterns, UV-Vis spectrophotometer and spectroscopic ellipsometry. The results show that the deposition rate of Ta2O5 thin films was decreased with the increase in oxygen flow rate. In addition, Ta2O5 thin films deposited at oxygen flow rate higher than 6 sccm could be exhibited sufficiently oxide thin film, the transmittance spectrum percentage indicated 80%, which corresponded to the obtained optical characteristic.


2016 ◽  
Vol 675-676 ◽  
pp. 217-220
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao

Transparent niobium oxide thin films were prepared by dc reactive magnetron sputtering under different oxygen flow rate. The niobium oxide thin films have been deposited on silicon wafer and glass substrate from a 99.99% pure niobium target at room temperature. The films were characterized to obtain the relationship between oxygen flow rate and deposition rate, structural, morphology and optical. The result show that the deposition rate decreased with increasing the oxygen flow rate. However, the transmittance spectrum percentage increases with increasing the oxygen flow rate.


2014 ◽  
Vol 979 ◽  
pp. 431-434 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao

In this article, amorphous tantalum oxide thin films were deposited by dc reactive magnetron sputtering onto silicon (001) wafer and glass slide substrates. Sputtering power has been varied for optimizing thin film quality. The structural and optical properties of the Ta2O5 thin films were investigated by using X-ray diffraction, UV-Vis spectrophotometer and spectroscopic ellipsometry respectively. The XRD pattern result indicates that the films are amorphous. It was found that the growth rate was also increased with increasing dc power up to 250 W, and the maximum growth rate observed at 250 W was 0.25 nm/s. In addition, the refractive index and packing density of the films increases with increasing dc sputtering power.


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