Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

2012 ◽  
Vol 34 ◽  
pp. 012006 ◽  
Author(s):  
S M Faraz ◽  
M Willander ◽  
Q Wahab
Keyword(s):  
Density Distribution ◽  
Schottky Diodes ◽  
Zno Nanorods ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Interface state density in Au and Al nGaAs Schottky diodes

1976 ◽  
Author(s):  
J.M. Borrego ◽  
R.J. Gutmann ◽  
S. Ashok ◽  
S. Ashok
Keyword(s):  
Schottky Diodes ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

2006 ◽  
Vol 527-529 ◽  
pp. 1525-1528
Author(s):  
W. Huang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Density Distribution ◽  
Valence Band ◽  
Conduction Band ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Plasma Enhanced Cvd ◽  
P Type

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

Interface state density in Au-nGaAs Schottky diodes

1977 ◽  
Vol 20 (2) ◽  
pp. 125-132 ◽  
Author(s):  
J.M. Borrego ◽  
R.J. Gutmann ◽  
S. Ashok
Keyword(s):  
Schottky Diodes ◽  
Interface State ◽  
State Density ◽  
Interface State Density
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