Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode

2020 ◽  
Vol 31 (23) ◽  
pp. 21260-21271
Author(s):  
S. Duman ◽  
K. Ejderha ◽  
I. Orak ◽  
N. Yıldırım ◽  
A. Turut
Keyword(s):  
Density Distribution ◽  
Temperature Dependence ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Frequency Measurements

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

2006 ◽  
Vol 527-529 ◽  
pp. 1525-1528
Author(s):  
W. Huang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Density Distribution ◽  
Valence Band ◽  
Conduction Band ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Plasma Enhanced Cvd ◽  
P Type

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

2017 ◽  
Vol 34 (9) ◽  
pp. 097301 ◽  
Author(s):  
Zhi-Fu Zhu ◽  
He-Qiu Zhang ◽  
Hong-Wei Liang ◽  
Xin-Cun Peng ◽  
Ji-Jun Zou ◽  
...  
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Frequency Measurements ◽  
Voltage Frequency
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