scholarly journals Epitaxial ZnO on p-Si and its MSM Structure Photoconductive Ultraviolet Detector

2019 ◽  
Vol 569 ◽  
pp. 022019
Author(s):  
Wen’an Zhong ◽  
Jianfeng Liu ◽  
Yu Zhao ◽  
Quanlin Zhang ◽  
Yijun Zhao ◽  
...  
Keyword(s):  
Ultraviolet Detector ◽  
Msm Structure

Fabrication and Investigation of NiOx MSM Structure on 4H-SiC Substrate

2021 ◽  
Author(s):  
Xi Wang ◽  
Meng Zhang ◽  
Hongbin Pu ◽  
Jichao Hu ◽  
Qingyang Dong ◽  
...  
Keyword(s):  
Msm Structure

Flexible ultraviolet detector with robust ZnO nanoparticle nanoassemblies on catechol‐functionalized polysiloxane nanofilms

2021 ◽  
pp. 50947
Author(s):  
Yida Liu ◽  
Huie Zhu ◽  
Akira Watanabe ◽  
Shunsuke Yamamoto ◽  
Tokuji Miyashita ◽  
...  
Keyword(s):  
Zno Nanoparticle ◽  
Ultraviolet Detector

Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor

2021 ◽  
pp. 1-5
Author(s):  
Shuwen Guo ◽  
Xiaolong Zhao ◽  
Yongning He ◽  
Zijian Pan ◽  
Mingchao Yang ◽  
...  
Keyword(s):  
Low Voltage ◽  
High Gain ◽  
Ultraviolet Detector

Is vacuum ultraviolet detector a concentration or a mass dependent detector?

2017 ◽  
Vol 1530 ◽  
pp. 171-175 ◽  
Author(s):  
Huian Liu ◽  
Guy Raffin ◽  
Guillaume Trutt ◽  
Jérôme Randon
Keyword(s):  
Vacuum Ultraviolet ◽  
Ultraviolet Detector ◽  
Mass Dependent

AlGaN/GaN Ultraviolet Detector with Dual Band Response

2011 ◽  
Vol 28 (5) ◽  
pp. 057802 ◽  
Author(s):  
Bo Gao ◽  
Hong-Xia Liu ◽  
Shu-Long Wang
Keyword(s):  
Dual Band ◽  
Ultraviolet Detector

HST-COS far-ultraviolet detector: final ground calibration

2001 ◽  
Author(s):  
John V. Vallerga ◽  
Jason B. McPhate ◽  
Adrian P. Martin ◽  
Geoffrey A. Gaines ◽  
Oswald H. W. Siegmund ◽  
...  
Keyword(s):  
Ultraviolet Detector ◽  
Far Ultraviolet ◽  
Ground Calibration

A Study on the Etching and Surface Characteristics of SiOC Thin Films After C6F12O Plasma Etching

2021 ◽  
Vol 21 (10) ◽  
pp. 5157-5164
Author(s):  
Junmyung Lee ◽  
Yeonsik Choi ◽  
Yunho Nam ◽  
Byung Jun Lee ◽  
Hyun Woo Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Inductively Coupled Plasma ◽  
Surface Characteristics ◽  
Silicon Oxycarbide ◽  
Mixed Gas ◽  
Plasma Properties ◽  
Ion Density ◽  
Ultraviolet Detector ◽  
Process Gas ◽  
Bonding Properties

Silicon oxycarbide (SiOC) film was etched using a CF4/C6F12O/O2 mixed gas plasma through an inductively coupled plasma etcher. Changes in the dielectric constant and surface chemical bonding properties were investigated using ellipsometry and Fourier transform infrared spectroscopy. Plasma diagnosis was carried out using a double Langmuir probe, ultraviolet detector, and residual gas analyzer. The physical and chemical plasma properties of CHF3 and C6F12O exhibited similar trends. However, the C6F12O mixed plasma exhibited a smaller change in dielectric constant compared to that of a conventional CHF3 mixed plasma, because of the lower ion density, ion energy flux, and UV intensity and thinner fluorocarbon-based polymer formation. Therefore, the liquefied C6F12O gas can substitute for the existing etching process gas and reduce the change in dielectric constant.

Investigation on the Photoluminescence of p-Type Porous Silicon for Ultraviolet Detector

2021 ◽  
Vol 95 (13) ◽  
pp. 2663-2666
Author(s):  
Jie Ding ◽  
Linghui Ge ◽  
Xiaodong Zhu ◽  
Jiwei Jiao ◽  
Liqiang Zhang ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Ultraviolet Detector ◽  
P Type
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