Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor

Author(s):  
Shuwen Guo ◽  
Xiaolong Zhao ◽  
Yongning He ◽  
Zijian Pan ◽  
Mingchao Yang ◽  
...  
2014 ◽  
Vol 23 (08) ◽  
pp. 1450108 ◽  
Author(s):  
VANDANA NIRANJAN ◽  
ASHWANI KUMAR ◽  
SHAIL BALA JAIN

In this work, a new composite transistor cell using dynamic body bias technique is proposed. This cell is based on self cascode topology. The key attractive feature of the proposed cell is that body effect is utilized to realize asymmetric threshold voltage self cascode structure. The proposed cell has nearly four times higher output impedance than its conventional version. Dynamic body bias technique increases the intrinsic gain of the proposed cell by 11.17 dB. Analytical formulation for output impedance and intrinsic gain parameters of the proposed cell has been derived using small signal analysis. The proposed cell can operate at low power supply voltage of 1 V and consumes merely 43.1 nW. PSpice simulation results using 180 nm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC) are included to prove the unique results. The proposed cell could constitute an efficient analog Very Large Scale Integration (VLSI) cell library in the design of high gain analog integrated circuits and is particularly interesting for biomedical and instrumentation applications requiring low-voltage low-power operation capability where the processing signal frequency is very low.


Energies ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 800
Author(s):  
David Marroqui ◽  
Ausias Garrigós ◽  
Cristian Torres ◽  
Carlos Orts ◽  
Jose M. Blanes ◽  
...  

Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.


2019 ◽  
Vol 71 ◽  
pp. 266-271 ◽  
Author(s):  
Donghui Lee ◽  
Kyung Gook Cho ◽  
Kyoung Hwan Seol ◽  
Sangho Lee ◽  
Soo-Hyung Choi ◽  
...  

2021 ◽  
Vol 13 (19) ◽  
pp. 11059
Author(s):  
Shahrukh Khan ◽  
Arshad Mahmood ◽  
Mohammad Zaid ◽  
Mohd Tariq ◽  
Chang-Hua Lin ◽  
...  

High gain DC-DC converters are getting popular due to the increased use of renewable energy sources (RESs). Common ground between the input and output, low voltage stress across power switches and high voltage gain at lower duty ratios are desirable features required in any high gain DC-DC converter. DC-DC converters are widely used in DC microgrids to supply power to meet local demands. In this work, a high step-up DC-DC converter is proposed based on the voltage lift (VL) technique using a single power switch. The proposed converter has a voltage gain greater than a traditional boost converter (TBC) and Traditional quadratic boost converter (TQBC). The effect of inductor parasitic resistances on the voltage gain of the converter is discussed. The losses occurring in various components are calculated using PLECS software. To confirm the performance of the converter, a hardware prototype of 200 W is developed in the laboratory. The simulation and hardware results are presented to determine the performance of the converter in both open-loop and closed-loop conditions. In closed-loop operation, a PI controller is used to maintain a constant output voltage when the load or input voltage is changed.


RSC Advances ◽  
2018 ◽  
Vol 8 (64) ◽  
pp. 36584-36595 ◽  
Author(s):  
Gang He ◽  
Wendong Li ◽  
Zhaoqi Sun ◽  
Miao Zhang ◽  
Xiaoshuang Chen

Recently, much attention has been paid to the investigation of solution-driven oxides for application in thin film transistors (TFTs).


Author(s):  
No Myoung ◽  
Ho Kang ◽  
Seok Kim ◽  
Byoung Choi ◽  
Seong-su Park ◽  
...  
Keyword(s):  

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