Patterned Porous Silicon Prepared by Reactive Ion Etching Technique

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

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InP LD with PD fabricated by Br2–reactive—ion–etching technique

Electronics and Communications in Japan (Part II Electronics) ◽

10.1002/ecjb.4420720404 ◽

1989 ◽

Vol 72 (4) ◽

pp. 26-32

Author(s):

Hiraaki Tsujii ◽

Kiyoshi Ohnaka ◽

Jun Shibata

Keyword(s):

Reactive Ion Etching ◽

Etching Technique ◽

Ion Etching

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Light-Emitting Porous Silicon After Standard Microelectronic Processing

MRS Proceedings ◽

10.1557/proc-298-179 ◽

1993 ◽

Vol 298 ◽

Cited By ~ 11

Author(s):

C. Peng ◽

L. Tsybeskov ◽

P.M. Fauchet ◽

F. Seiferth ◽

S.K. Kurinec ◽

...

Keyword(s):

Porous Silicon ◽

Ion Implantation ◽

Reactive Ion Etching ◽

Chemical Oxidation ◽

Ion Etching ◽

Light Emitting ◽

And Shifts ◽

Microelectronic Processing ◽

Physical And Chemical ◽

Processing Steps

AbstractWe have investigated the properties of light-emitting porous silicon (LEpSi) after standard microelectronic processing steps such as annealing, thermal and chemical oxidation, ion implantation, and reactive ion etching. The nature of the physical and chemical changes induced by these processing steps is studied. After thermal or chemical oxidation, the photoluminescence (PL) from LEpSi is blue shifted and more stable. Low dose dopant implantation essentially keeps the PL spectrum unchanged. Thermal annealing after ion implantation affects the PL intensity differently, depending on the type of ions. Reactive ion etching changes the surface morphology and shifts the PL peak to blue.

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