Fabrication of Micro-Gap Structure by Reactive Ion Etching Technique (RIE) for Future Reproductivity of Nanogap Biosensor

2015 ◽  
Vol 1109 ◽  
pp. 64-68
Author(s):  
Q. Humayun ◽  
U. Hashim

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.


Author(s):  
R Suryana ◽  
N D Pratiwi ◽  
M Handayani ◽  
M Santika ◽  
O Nakatsuka

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.


Author(s):  
Tao Deng ◽  
James R. Cournoyer ◽  
James H. Schermerhorn ◽  
Joleyn Balch ◽  
Margaret L. Blohm

Tuning the plasma field in reactive ion etching generates different etching profile of nanoparticles. For nanoparticles in an isotropic plasma field, there will be uniform shrinkage of the particle sizes due to the isotropic etching, with the curvature of the particles unchanged after the etching. An anisotropic etching, on the other hand, provides rich opportunities to modify the shape of the particles with reduced dimensions. For a monolayer of silica nanoparticles on a flat substrate in a unidirectional plasma field, the reactive ion etching changed the shape of silica nanoparticles from spherical to spheroid-like geometry. The mathematical description of the final spheroid-like geometry was discussed and matched well with the experimental results. The surface curvature of the particles after etching remained the same for both the top and the bottom surfaces, while the overall shape transformed to spheroid-like geometry. Varying the etching time resulted in particles with different height to width ratios. The unique geometry of these non-spherical particles will impact fundament properties of such particles, such as packing and assembly. In the case of spheroid-like particles, packing of such particles into ordered structures will involve an orientational order, which is different from spherical nanoparticles that have no orientational order.


Author(s):  
Katsuyoshi Suzuki ◽  
Shigeki Takahashi ◽  
Makoto Okano ◽  
Masahiro Imada ◽  
Kenji Ishizaki ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document