Three-dimensional photonic crystals developed by double-angled reactive-ion etching technique

2009 ◽  
Author(s):  
Katsuyoshi Suzuki ◽  
Shigeki Takahashi ◽  
Makoto Okano ◽  
Masahiro Imada ◽  
Kenji Ishizaki ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Reactive Ion Etching ◽  
Three Dimensional ◽  
Etching Technique ◽  
Ion Etching

Formation of Through-Silicon-Vias by Laser Drilling and Deep Reactive Ion Etching

2004 ◽  
Author(s):  
Ronald Hon ◽  
Shawn X. D. Zhang ◽  
S. W. Ricky Lee
Keyword(s):  
Reactive Ion Etching ◽  
Three Dimensional ◽  
Laser Drilling ◽  
Wet Etching ◽  
Ion Etching ◽  
Through Silicon Vias ◽  
Deep Reactive Ion Etching ◽  
Definition Of ◽  
Silicon Vias ◽  
Wafer Thinning

The focus of this study is on the fabrication of through silicon vias (TSV) for three dimensional packaging. According to IPC-6016, the definition of microvias is a hole with a diameter of less than or equal to 150 μm. In order to meet this requirement, laser drilling and deep reactive ion etching (but not wet etching) are used to make the microvias. Comparisons between these two different methods are carried out in terms of wall straightness, smoothness, smallest via produced and time needed for fabrication. In addition, discussion on wafer thinning for making through silicon microvias is given as well.

scholarly journals Patterned Porous Silicon Prepared by Reactive Ion Etching Technique

2019 ◽  
Vol 578 ◽  
pp. 012019
Author(s):  
R Suryana ◽  
N D Pratiwi ◽  
M Handayani ◽  
M Santika ◽  
O Nakatsuka
Keyword(s):  
Porous Silicon ◽  
Reactive Ion Etching ◽  
Etching Technique ◽  
Ion Etching

Fabrication of Micro-Gap Structure by Reactive Ion Etching Technique (RIE) for Future Reproductivity of Nanogap Biosensor

2015 ◽  
Vol 1109 ◽  
pp. 64-68
Author(s):  
Q. Humayun ◽  
U. Hashim
Keyword(s):  
Reactive Ion Etching ◽  
Electrical Characterization ◽  
Coated Sample ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Etching Technique ◽  
Ion Etching ◽  
Gap Spacing ◽  
Gap Structure

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

Fabrication of InP Submicron Pillars for Two-Dimensional Photonic Crystals by Reactive Ion Etching

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 7172-7176 ◽  
Author(s):  
Hitoshi Hatate ◽  
Masayuki Hashimoto ◽  
Hirofumi Shirakawa ◽  
Yasufumi Fujiwara ◽  
Yoshikazu Takeda ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Reactive Ion Etching ◽  
Two Dimensional ◽  
Ion Etching
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