scholarly journals Study of Metal Organic Chemical Vapour Deposition (MOCVD) semiconductors III-V hyperstructures with Secondary Ion Mass Spectrometry (SIMS)

2014 ◽  
Vol 59 ◽  
pp. 012002
Author(s):  
D Padilla-Rueda ◽  
H Téllez Lozano ◽  
José M Vadillo ◽  
J J Laserna
Keyword(s):  
Mass Spectrometry ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Ion Mass Spectrometry ◽  
Metal Organic ◽  
Secondary Ion

Metal Organic Chemical Vapour Deposition Growth of Epitaxial ZnSe/ZnS Multiple Layered Structures

1987 ◽  
Vol 102 ◽  
Author(s):  
Heather M Yates ◽  
John O Williams
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapour Deposition ◽  
Mass Spectroscopy ◽  
Hydrogen Sulphide ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Organic ◽  
Secondary Ion

ABSTRACTZnSe-ZnS multilayers have been prepared by atmospheric. pressure metal organic chemical vapour deposition (M0CVD) using dimethylzinc, hydrogen sulphide and hydrogen selenide. Layer thicknesses down to 500Å have been obtained and the interfaces, as measured by secondary ion mass spectroscopy (SIMS) and electron microscopy, are regular. A notable improvement in interface abruptness was observed with better control of experimental procedures and more especially with the growth of a ZnSe buffer layer between the GaAs(100) substrate and multilayers.

Vapour-pressure data for adducts of dimethylzinc: sources and dopants for zinc in metal–organic chemical vapour deposition

1993 ◽  
Vol 3 (7) ◽  
pp. 739-742 ◽  
Author(s):  
Paul O'Brien ◽  
John R. Walsh ◽  
Anthony C. Jones ◽  
Simon A. Rushworth ◽  
Clive Meaton
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pressure Data ◽  
Metal Organic
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