Optical properties of Co3+ doped in α-Al2O3 with Considering Lattice Relaxation Effect

Me4P[Pd(dmit)2]2 is an organic magnet that show long range antiferromagnetic ordering as indicated by Muon Spin Rotation measurements. Three muon centers were observed in the material. To determine the muon stopping sites, we have employed the Molecular Orbital Cluster Method to study the electronic structure of muonated Me4P[Pd(dmit)2]2. We used a cluster containing 1 formula unit in our investigations and applied the Density Functional Theory method. Three µ+ centers in the vicinity of three chemically non-equivalent sulfur sites, namely thione, thiol and thiolate were examined. All three µ+ sites were found to be energetically stable. In the pure Me4P[Pd(dmit)2]2 cluster, the spin densities of the doublet state system is spread throughout the entire dimer. Spin density of only about 0.13 is localized around the thiolate moiety. For all three µ+ centers, the lattice relaxation effect is important to stabilize the sites energetically.

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Modeling the optical properties of sapphire (α-Al2O3)

Optics Communications ◽

10.1016/s0030-4018(98)00503-3 ◽

1998 ◽

Vol 157 (1-6) ◽

pp. 72-76 ◽

Cited By ~ 15

Author(s):

Aleksandra B. Djurišić ◽

E.Herbert Li

Keyword(s):

Optical Properties ◽

Α Al2o3

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Self-trapped hole (VKcenter) in NaCl-type alkali halides. Lattice relaxation and optical properties forMX:X2 −systems

Physical Review B ◽

10.1103/physrevb.30.4621 ◽

1984 ◽

Vol 30 (8) ◽

pp. 4621-4639 ◽

Cited By ~ 61

Author(s):

Paul E. Cade ◽

A. M. Stoneham ◽

P. W. Tasker

Keyword(s):

Optical Properties ◽

Alkali Halides ◽

Lattice Relaxation

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Structural and optical properties of SnO2 films grown on α-Al2O3(0001) by MOCVD

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2007.10.039 ◽

2008 ◽

Vol 310 (2) ◽

pp. 295-298 ◽

Cited By ~ 18

Author(s):

Xianjin Feng ◽

Jin Ma ◽

Fan Yang ◽

Feng Ji ◽

Caina Luan ◽

...

Keyword(s):

Optical Properties ◽

Structural And Optical Properties ◽

Α Al2o3

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Lattice Relaxation Effects in Si and GaAs Nanocrystals

MRS Proceedings ◽

10.1557/proc-358-199 ◽

1994 ◽

Vol 358 ◽

Author(s):

X. S. Zhao ◽

Y. R. Ge ◽

J. Schroeder ◽

P. D. Persans

Keyword(s):

Gallium Arsenide ◽

Optical Properties ◽

Porous Silicon ◽

Raman Scattering ◽

Lattice Relaxation ◽

Experimental Results ◽

Vibrational Modes ◽

Strain Effects ◽

Relaxation Effects ◽

Almost All

ABSTRACTRaman scattering results on porous silicon, and silicon and gallium arsenide nanocrystals show that almost all vibrational modes become Raman active and remarkably soft in these nanocrystal systems. The experimental results further demonstrate that the carrier-induced strain effects play an important role on the optical properties of such nanocrystal systems.

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ELECTRONIC AND OPTICAL PROPERTIES OF HYDROGENATED SILICON CLUSTERS

Surface Review and Letters ◽

10.1142/s0218625x96000267 ◽

1996 ◽

Vol 03 (01) ◽

pp. 127-131 ◽

Cited By ~ 3

Author(s):

T. UDA

Keyword(s):

Optical Properties ◽

Density Functional ◽

Energy Gap ◽

Lattice Relaxation ◽

Transition Elements ◽

Silicon Clusters ◽

Hydrogenated Silicon ◽

Electronic And Optical Properties ◽

Relaxation Temperature ◽

Structurally Stable

Pseudopotential density-functional calculations of structural, electronic, and optical properties of nanoscale silicon clusters are presented. Perfectly hydrogen-saturated clusters are found to be structurally stable. The energy gap shows substantial blueshift and the dipole transition across the gap is allowed. The effect of dehydrogenation upon transition elements is examined, taking into account the lattice relaxation. Temperature dependence of luminescence intensity is also investigated.

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Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Indium Compositions

MRS Proceedings ◽

10.1557/proc-764-c3.35 ◽

2003 ◽

Vol 764 ◽

Author(s):

Chang-Soo Kim ◽

Sam-Kyu Noh ◽

Kyuhan Lee ◽

Sunwoon Kim ◽

Jay P. Song

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Lattice Relaxation ◽

Multiple Quantum ◽

Structural And Optical Properties ◽

Rich Region ◽

Quantum Well Structures ◽

Peak Intensity ◽

Peak Energy ◽

Multi Quantum Well

AbstractThe structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) grown on sapphire by MOCVD have been investigated using high-resolution XRD, PL and TEM. The samples consisted of 10 periods of InGaN wells with 6.5nm thickness. The designed indium compositions were 15, 20, 25 and 30% (samples C15, C20, C25, C30, respectively). The thickness of GaN barrier was 7.5nm. The MQW in sample C15 maintained lattice coherency with the GaN epilayer underneath, the MQWs in the other samples, however, experienced lattice relaxation. The crystallinity of the samples decreased considerably with In concentration. As In composition increased, PL peak energy showed a red-shift, and the FWHM of the peaks increased. The increase in the FWHM is attributed to the defects due to the lattice relaxation. For C25 the PL peak intensity increased sharply in spite of the defects due to the lattice relaxation of the sample. It is concluded that the results are related to the In-rich region due to indium phase separation which was observed by TEM image.

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