Lattice Relaxation Effect on Bound Exciton in Ga1-XInXP:N

1992 ◽  
Vol 65 ◽  
pp. 159-166
2015 ◽  
Vol 827 ◽  
pp. 355-359 ◽  
Author(s):  
Shukri Sulaiman ◽  
S.N.A. Ahmad ◽  
M.I. Mohamed-Ibrahim ◽  
Isao Watanabe

Me4P[Pd(dmit)2]2 is an organic magnet that show long range antiferromagnetic ordering as indicated by Muon Spin Rotation measurements. Three muon centers were observed in the material. To determine the muon stopping sites, we have employed the Molecular Orbital Cluster Method to study the electronic structure of muonated Me4P[Pd(dmit)2]2. We used a cluster containing 1 formula unit in our investigations and applied the Density Functional Theory method. Three µ+ centers in the vicinity of three chemically non-equivalent sulfur sites, namely thione, thiol and thiolate were examined. All three µ+ sites were found to be energetically stable. In the pure Me4P[Pd(dmit)2]2 cluster, the spin densities of the doublet state system is spread throughout the entire dimer. Spin density of only about 0.13 is localized around the thiolate moiety. For all three µ+ centers, the lattice relaxation effect is important to stabilize the sites energetically.


2004 ◽  
Vol 810 ◽  
Author(s):  
A. Vengurlekar ◽  
S. Ashok ◽  
C. E. Kalnas ◽  
N. D. Theodore

ABSTRACTThe ability to activate greater amounts of dopants at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on the effect of incorporating atomic hydrogen on the activation of implanted boron in shallow junctions. Hydrogen incorporation into the sample was carried out by exposure to an electron cyclotron resonance (ECR) hydrogen plasma. Enhanced activation was observed in hydrogenated samples for post-implantation annealing temperatures of 450°C and below, as measured by spreading resistance profilometry, and confirmed by identical boron atomic profile in hydrogenated and unhydrogenated samples. The enhancement in boron activation at lower temperature is attributed to the creation of vacancies in the boron-implanted region, the lattice-relaxation effect by the presence of atomic hydrogen, and the effect of atomic hydrogen on boron-interstitial cluster formation.


Author(s):  
Mega Novita ◽  
Duwi Nuvitalia ◽  
Nur Cholifah ◽  
Kazuyoshi Ogasawara

1988 ◽  
Vol 66 (8) ◽  
pp. 1848-1852 ◽  
Author(s):  
Yukiko N. Chihara ◽  
Nobuo Nakamura ◽  
Hideaki Chihara

The proton and fluorine second moments and the spin-lattice relaxation times T1 (at 25.75 MHz) were measured in the solid complex trimethylamine–trifluoroborane from 53 to 300 K. There is a cross-relaxation effect between 1H and 19F below 120 K. Their T1 minima near 140 K led to activation energies of 10.6 and 11.1 kJ mol−1 for the reorientation of the methyl and the trifluoride groups, respectively. An additional minimum observed in the T1 of protons at about 240 K was attributed to the reorientation of the trimethylamine group about the N—B bond with an activation energy of 25.0 kJ mol−1. A comparison of these potential parameters with those in other trimethylamine complexes led to a notion that the activation energies for the reorientation of the (CH3)3N group in the trimethylamine–trifluoroborane complex are mainly governed by the intramolecular steric effect.


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