scholarly journals Structural and optical properties of amorphous TiO2 films deposited by reactive DC magnetron sputtering

2020 ◽  
Vol 998 ◽  
pp. 012011
Author(s):  
M Lavanya ◽  
S Sunita Ratnam ◽  
B Rajesh Kumar ◽  
T Subba Rao
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Tio2 Films ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Amorphous Tio2

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

2010 ◽  
Vol 256 (14) ◽  
pp. 4591-4595 ◽  
Author(s):  
Aïssa Keffous ◽  
Abdelhak Cheriet ◽  
Youcef Belkacem ◽  
Noureddine Gabouze ◽  
Assia Boukezzata ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties

Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media

2011 ◽  
Vol 189-193 ◽  
pp. 4430-4433 ◽  
Author(s):  
Sin Liang Ou ◽  
Chin Pao Cheng ◽  
Chin Yen Yeh ◽  
Chung Jen Chung ◽  
Kuo Sheng Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Optical Recording ◽  
Blue Laser ◽  
Recording Media ◽  
Dc Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Protective Layers ◽  
20 Nm

The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

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