Effect of substrate temperature on the structural and optical properties of ZnO and Al-doped ZnO thin films prepared by dc magnetron sputtering

2009 ◽  
Vol 282 (2) ◽  
pp. 247-252 ◽  
Author(s):  
Xue-Yong Li ◽  
Hong-Jian Li ◽  
Zhi-Jun Wang ◽  
Hui Xia ◽  
Zhi-Yong Xiong ◽  
...  
2016 ◽  
Vol 8 (4(2)) ◽  
pp. 04053-1-04053-4 ◽  
Author(s):  
A. Sh. Asvarov ◽  
◽  
S. Sh. Makhmudov ◽  
A. Kh. Abduev ◽  
A. K. Akhmedov ◽  
...  

2012 ◽  
Vol 626 ◽  
pp. 25-28 ◽  
Author(s):  
A. Ismail ◽  
Mat Johar Abdullah

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. For AlN doped ZnO at RF powers of 200 W (ZnO target) and 200W (AlN target), the ZnO (002) peak showed the highest intensity at the substrate temperature of 400˚ C. The prepared films showed good transmission of above 72 % in the visible range. The calculated values of energy band gaps were in the range (3.42 eV - 3.54 eV) for the films prepared at different substrate temperatures.


2013 ◽  
Vol 371 ◽  
pp. 126-129 ◽  
Author(s):  
Fei Gao ◽  
Xiao Yan Liu ◽  
Li Yun Zheng ◽  
Mei Xia Li ◽  
Yong Mei Bai ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document