Influence of processing temperature and precursor composition on phase region of solution processed methylammonium lead iodide perovskite

2017 ◽  
Vol 4 (9) ◽  
pp. 096201
Author(s):  
A K Mishra ◽  
D Hodges ◽  
R D K Misra
2015 ◽  
Vol 27 (13) ◽  
pp. 4612-4619 ◽  
Author(s):  
Zhaoning Song ◽  
Suneth C. Watthage ◽  
Adam B. Phillips ◽  
Brandon L. Tompkins ◽  
Randy J. Ellingson ◽  
...  

2021 ◽  
Vol 9 ◽  
Author(s):  
Oleksandra Shargaieva ◽  
Hampus Näsström ◽  
Jinzhao Li ◽  
Daniel M. Többens ◽  
Eva L. Unger

Hybrid perovskites are a novel type of semiconductors that show great potential for solution-processed optoelectronic devices. For all applications, the device performance is determined by the quality of the solution-processed perovskite thin films. During solution processing, the interaction of solvent with precursor molecules often leads to the formation of solvate intermediate phases that may diverge the crystallization pathway from simple solvent evaporation to a multi-step formation process. We here investigate the crystallization of methylammonium lead iodide (MAPbI3) from a range of commonly utilized solvents, namely dimethyl sulfoxide (DMSO), N,N-dimethylformamide (DMF), N-methylpyrrolidone (NMP), and gamma-butyrolactone (GBL) at different temperatures ranging from 40°C to >100°C by in-situ grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements. For all solvents but GBL, we clearly observe the formation of solvate-intermediate phases at moderate processing temperatures. With increasing temperatures, an increasing fraction of the MAPbI3 perovskite phase is observed to form directly. From the temperature-dependence of the phase-formation and phase-decomposition rates, the activation energy to form the MAPbI3 perovskite phase from the solvate-phases are determined as a quantitative metric for the binding strength of the solvent within the solvate-intermediate phases and we observe a trend of DMSO > DMF > NMP > GBL. These results enable prediction of processing temperatures at which solvent molecules can be effectively removed.


2018 ◽  
Vol 1116 ◽  
pp. 032005
Author(s):  
Diana A. Barus ◽  
Kerista Sebayang ◽  
Junedi Ginting ◽  
Riski Titian Ginting

2017 ◽  
Vol 58 (8) ◽  
Author(s):  
E. S. Yudanova ◽  
◽  
T. A. Duda ◽  
O. E. Tereshchenko ◽  
O. I. Semenova ◽  
...  

Author(s):  
Holger Röhm ◽  
Tobias Leonhard ◽  
Michael J. Hoffmann ◽  
Alexander Colsmann

2018 ◽  
Author(s):  
Nga Phung ◽  
Antonio Abate ◽  
Daniele Meggiolaro ◽  
Filippo De Angelis ◽  
Roberto Felix Duarte ◽  
...  

2018 ◽  
Author(s):  
Gustavo de Miguel ◽  
Alexander Davis Jodlowski ◽  
Cristina Roldán-Carmona ◽  
Luis Camacho Delgado ◽  
Mohammad Khaja Nazeeruddin

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4385
Author(s):  
Ehsan Raza ◽  
Fakhra Aziz ◽  
Arti Mishra ◽  
Noora Jabor Al-Thani ◽  
Zubair Ahmad

The current work proposed the application of methylammonium lead iodide (MAPbI3) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI3(rods)-silver (Ag/MAPbI3/Ag) based photo-resistor was fabricated. The MAPbI3 microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI3 microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI3 microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current–voltage (I–V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond.


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