Effect of heavy hole band depth on the thermoelectric properties of highly doped p-type lead telluride

2018 ◽  
Vol 6 (1) ◽  
pp. 015512 ◽  
Author(s):  
A V Dmitriev
1998 ◽  
Vol 39 (5) ◽  
pp. 602-605 ◽  
Author(s):  
Yasutoshi Noda ◽  
Masaki Orihashi ◽  
Isao A. Nishida

1997 ◽  
Vol 9 (1/2) ◽  
pp. 32-37
Author(s):  
Masaki ORIHASHI ◽  
Yasutoshi NODA ◽  
Lidong CHEN ◽  
Toshio HIRAI

2020 ◽  
Vol 14 (4) ◽  
pp. 1900604
Author(s):  
Jarosław Wróbel ◽  
Gilberto A. Umana-Membreno ◽  
Jacek Boguski ◽  
Dariusz Sztenkiel ◽  
Paweł Piotr Michałowski ◽  
...  

2019 ◽  
Vol 53 (4) ◽  
pp. 441
Author(s):  
А.В. Дмитриев

AbstractThe full set of thermoelectric parameters of heavily doped p -PbTe in the temperature range of 300–1200 K at an acceptor doping level of N _ a = 1 × 10^19–4 × 10^20 cm^–3 and a heavy-hole band depth ranging from 0.36 to 0.7 eV is calculated. The figure-of-merit value Z is found to be highly sensitive to the doping level and increased by a factor of 1.5 with an increase in the dopant concentration from 1 × 10^19 to 5 × 10^19 cm^–3; the maximum Z value is found to correspond to N _ a = (1–2) × 10^20 cm^–3. It is demonstrated that the change in the heavy-hole band depth leads to a noticeable shift of the Z maximum position along the temperature axis without noticeable Z maximum variation. The temperature corresponding to the maximum Z value is similar to that at which the top of the light-hole band crosses the Fermi level. The maximum calculateded ZT value is shown to be 1.64. At a heavy-hole band depth of 0.5 eV, the calculated results agree well with the available experimental data.


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