Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths

AbstractThe full set of thermoelectric parameters of heavily doped p -PbTe in the temperature range of 300–1200 K at an acceptor doping level of N _ a = 1 × 10^19–4 × 10^20 cm^–3 and a heavy-hole band depth ranging from 0.36 to 0.7 eV is calculated. The figure-of-merit value Z is found to be highly sensitive to the doping level and increased by a factor of 1.5 with an increase in the dopant concentration from 1 × 10^19 to 5 × 10^19 cm^–3; the maximum Z value is found to correspond to N _ a = (1–2) × 10^20 cm^–3. It is demonstrated that the change in the heavy-hole band depth leads to a noticeable shift of the Z maximum position along the temperature axis without noticeable Z maximum variation. The temperature corresponding to the maximum Z value is similar to that at which the top of the light-hole band crosses the Fermi level. The maximum calculateded ZT value is shown to be 1.64. At a heavy-hole band depth of 0.5 eV, the calculated results agree well with the available experimental data.

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Far Infrared Properties of Shallow Impurity States in Heavily Doped p-Type Germanium

1976 International Conference on Submillimeter Waves and Their Applications ◽

10.1109/icswa.1976.9350074 ◽

1976 ◽

Author(s):

K. Yoshihiro ◽

J. Kinoshita ◽

C. Yamanouchi

Keyword(s):

Far Infrared ◽

Impurity States ◽

Shallow Impurity ◽

Heavily Doped ◽

P Type

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Analysis of Defects in Heavily-Doped MBE-GaAs

MRS Proceedings ◽

10.1557/proc-14-271 ◽

1982 ◽

Vol 14 ◽

Cited By ~ 4

Author(s):

C.B. Carter ◽

D.M. Desimone ◽

H.T. Griem ◽

C.E.C. Wood

Keyword(s):

Liquid Phase ◽

Molecular Beam ◽

Type Material ◽

Grown Layer ◽

Defect Clusters ◽

Complex Defect ◽

Heavily Doped ◽

Rich Material ◽

P Type ◽

Very High

ABSTRACTGaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

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Temperature Dependent Model for Hole Effective Mass in Heavily Doped p-type SiGe

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1996321 ◽

1996 ◽

Vol 06 (C3) ◽

pp. C3-137-C3-142

Author(s):

S. Sokolic ◽

S. Amon

Keyword(s):

Effective Mass ◽

Temperature Dependent ◽

Hole Effective Mass ◽

Dependent Model ◽

Heavily Doped ◽

Temperature Dependent Model ◽

P Type

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Behavior of W and WSix Contact Metallization on n- and p- Type GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003252 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 684-690

Author(s):

X. A. Cao ◽

F. Ren ◽

J. R. Lothian ◽

S. J. Pearton ◽

C. R. Abernathy ◽

...

Keyword(s):

Contact Resistance ◽

Annealing Temperature ◽

Specific Contact Resistance ◽

Ohmic Behavior ◽

Contact Metallization ◽

Specific Contact ◽

Heavily Doped ◽

Sputter Deposited ◽

Optimum Annealing Temperature ◽

P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

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