scholarly journals Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

2020 ◽  
Vol 14 (4) ◽  
pp. 1900604
Author(s):  
Jarosław Wróbel ◽  
Gilberto A. Umana-Membreno ◽  
Jacek Boguski ◽  
Dariusz Sztenkiel ◽  
Paweł Piotr Michałowski ◽  
...  
Keyword(s):  
Heavy Hole ◽  
Mobility Spectrum ◽  
Band Splitting ◽  
Hole Band ◽  
P Type

High thermoelectric efficiency in co-doped degenerate p-type PbTe

2010 ◽  
Vol 1267 ◽  
Author(s):  
Ioannis Androulakis ◽  
Ilyia Todorov ◽  
Duck Young Chung ◽  
Sedat Ballikaya ◽  
Guoyu Wang ◽  
...  
Keyword(s):  
Heavy Hole ◽  
Elevated Temperatures ◽  
Resonant State ◽  
Band Model ◽  
Hole Density ◽  
Thermoelectric Efficiency ◽  
Na Substitution ◽  
Valence Bands ◽  
P Type ◽  
Two Band Model

AbstractWe explored the effect of K and K-Na substitution for Pb atoms in the lattice of PbTe, in an effort to test a hypothesis for the development of a resonant state that may enhance the thermoelectric power. At 300K the data can adequately be explained by a combination of a single and two-band model for the valence band of PbTe depending on hole density that varies in the range 1-15 × 1019 cm-3. A change in scattering mechanism was observed in the temperature dependence of the electrical conductivity, σ, for samples concurrently doped with K and Na which results in significantly enhanced σ at elevated temperatures and hence power factors. Thermal conductivity data provide evidence of a strong interaction between the light- and the heavy-hole valence bands at least up to 500K. Figure of merits as high as 1.3 at 700K were measured as a result of the enhanced power factors.

Probe of the Band Structure of MBE Grown p-Type InMnAs at Ultrahigh Magnetic Fields

SPIN ◽  
2015 ◽  
Vol 05 (01) ◽  
pp. 1550002 ◽  
Author(s):  
Y. Sun ◽  
F. V. Kyrychenko ◽  
G. D. Sanders ◽  
C. J. Stanton ◽  
G. A. Khodaparast ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Fields ◽  
Band Structure ◽  
Heavy Hole ◽  
Theoretical Calculations ◽  
Interaction Strength ◽  
Golden Rule ◽  
Exchange Interactions ◽  
Landau Levels ◽  
P Type

We present a theoretical and experimental study on electronic and magneto-optical properties of p-type paramagnetic InMnAs dilute magnetic semiconductor (DMS) alloys in ultrahigh (> 100 T) external magnetic fields (B). Theoretical calculations are based on an 8-band Pidgeon–Brown model which is generalized to include the wavevector dependence of the electronic states along B as well as s–d and p–d exchange interactions with localized Mn d-electrons. The spin-dependent electronic structure as a function of Mn doping is computed and the dependence of the valence band structure on parameters such as the sp–d exchange interaction strength and effective masses in paramagnetic p- InMnAs alloys are examined. The cyclotron resonance (CR) and magneto-optical properties of InMnAs are calculated using Fermi's golden rule. Two strong CR peaks are observed in p-type InMnAs alloys which correspond to the transitions within either heavy-hole (HH) or light-hole (LH) Landau levels. Furthermore, we also observed strong resonance absorption for electron-active polarization which can occur in p-type semiconductors originating from transitions between the light and heavy hole Landau levels.

An enhanced Seebeck coefficient and high thermoelectric performance in p-type In and Mg co-doped Sn1−xPbxTe via the co-adjuvant effect of the resonance level and heavy hole valence band

2017 ◽  
Vol 5 (23) ◽  
pp. 5737-5748 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas
Keyword(s):  
Synergistic Effect ◽  
Seebeck Coefficient ◽  
Valence Band ◽  
Heavy Hole ◽  
Resonance Level ◽  
Thermoelectric Performance ◽  
Adjuvant Effect ◽  
P Type ◽  
Co Doped

Remarkable enhancement of the Seebeck coefficient of an Sn rich Sn1−xPbxTe system due to the synergistic effect of resonance level formation and valence band convergence.

Influence of heavy-hole scattering on the magnetotransport behaviour of p-type zero-gap Hg1-xMnxTe

1993 ◽  
Vol 8 (1S) ◽  
pp. S165-S167 ◽  
Author(s):  
Guozhen Zheng ◽  
Jinxi Shen ◽  
Shaoling Guo ◽  
Dingyuan Tang
Keyword(s):  
Heavy Hole ◽  
P Type

Piezoresistive Properties of Boron-Doped PECVD Microcrystalline Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
Shu Wen Guo ◽  
Song Sheng Tan ◽  
Wei Yuan Wang
Keyword(s):  
Thermionic Emission ◽  
State Density ◽  
Gauge Factor ◽  
Optimized Design ◽  
Microcrystalline Silicon ◽  
Boron Doped ◽  
Hole Band ◽  
Si Films ◽  
P Type ◽  
Quartz Substrates

ABSTRACTThe piezoresistive properties of boron-doped PECVD microcrystalline Si films (μc-Si) deposited on SiO2 coated Si, covar or quartz substrates have been investigated. The relations between the gauge factor (G.F.) and doping concentrations as well as the film thickness etc. have been obtained experimentally. The maximum longitudinal G.F. of 25 and 20 are measured for Si and covar substrates respectively. An expression for calculating G.F. of P-type μc-Si is derived theoretically by use of the splitting model of heavy and light hole band at k=0 and the thermionic emission theory. The calculated dependences of G.F. on the doping concentrations, grain size and trap state density agree well with the experimental results, which offer a better understanding of the piezoresistive characteristics of μc-Si or poly-Si, and enable optimized design and fabrication of μc-Si or poly-Si strain gauges.

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