Growth, characterization and theoretical optical properties of polycrystalline n-silicon thin films for oxide-silicon tandem cells

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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Air Exposure Improvement of Optical Properties of Hydrogenated Nanostructured Silicon Thin Films for Optoelectronic Application

Optoelectronics - Materials and Techniques ◽

10.5772/20312 ◽

2011 ◽

Author(s):

Atif Mossad

Keyword(s):

Thin Films ◽

Optical Properties ◽

Air Exposure ◽

Optoelectronic Application ◽

Silicon Thin Films ◽

Nanostructured Silicon

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A New General Method for the Determination of Optical Properties of Amorphous Silicon Films

MRS Proceedings ◽

10.1557/proc-192-633 ◽

1990 ◽

Vol 192 ◽

Author(s):

G. Amato ◽

L. Boarino ◽

F. Fizzotti ◽

C. Manfredotti

Keyword(s):

Thin Films ◽

Optical Properties ◽

Amorphous Silicon ◽

Optical Response ◽

The Other ◽

New Method ◽

Silicon Thin Films ◽

Physical Insight ◽

General Method

ABSTRACTWe propose to apply a new method to model the optical response of amorphous silicon thin films. This method presents the advantage of having a good physical insight. On the other hand, although the model has been originally tested on different materials like a-Si, a-Ge and a-GaAs, we show that it is also sensitive to small differences like those that can exist between intrinsic and doped a-Si:H.

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Structural and optical properties of polycrystalline silicon thin films deposited by PECVD method

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 ◽

10.1109/pvsc.1996.564228 ◽

1996 ◽

Author(s):

Furong Zhu ◽

H. Kohara ◽

T. Fuyuki ◽

H. Matsunami

Keyword(s):

Thin Films ◽

Optical Properties ◽

Polycrystalline Silicon ◽

Structural And Optical Properties ◽

Silicon Thin Films

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Soluble polycyclosilane–polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivity

Journal of Materials Chemistry C ◽

10.1039/c4tc01917b ◽

2015 ◽

Vol 3 (2) ◽

pp. 239-242 ◽

Cited By ~ 4

Author(s):

Sung Jin Park ◽

Hyeon Mo Cho ◽

Myong Euy Lee ◽

Miyoung Kim ◽

Kwenwoo Han ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Hybrid Materials ◽

Hybrid Material ◽

Silicon Thin Film ◽

New Class ◽

Silicon Thin Films ◽

193 Nm

Silicon thin films that fulfil the needs of current semiconductor lithography were prepared from a new class of polycyclosilane–polysiloxane hybrid materials.

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