In situ quantitative analysis of etching process of human teeth by atomic force microscopy

Microscopy ◽  
2005 ◽  
Vol 54 (3) ◽  
pp. 299-308 ◽  
Author(s):  
Fumio Watari
2019 ◽  
Vol 954 ◽  
pp. 21-25
Author(s):  
Zhi Fei Zhao ◽  
Yun Li ◽  
Yi Wang ◽  
Ping Zhou ◽  
Wu Yun ◽  
...  

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 and 22 cm-1, respectively.


1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé

2001 ◽  
Vol 167 (1) ◽  
pp. 139-151 ◽  
Author(s):  
Connie J. Rossini ◽  
Justinn F. Arceo ◽  
Evan R. McCarney ◽  
Brian H. Augustine ◽  
Douglas E. Dennis ◽  
...  

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus

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