Magnified pseudo-elemental map of atomic column obtained by Moiré method in scanning transmission electron microscopy

Microscopy ◽  
2014 ◽  
Vol 63 (5) ◽  
pp. 391-395 ◽  
Author(s):  
Yukihito Kondo ◽  
Eiji Okunishi
2011 ◽  
Vol 17 (4) ◽  
pp. 578-581 ◽  
Author(s):  
David Hernández-Maldonado ◽  
Miriam Herrera ◽  
Pablo Alonso-González ◽  
Yolanda González ◽  
Luisa González ◽  
...  

AbstractWe show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1−xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett61, 557–559].


Author(s):  
F. Khoury ◽  
L. H. Bolz

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.


2000 ◽  
Vol 638 ◽  
Author(s):  
Alan D.F. Dunbar ◽  
Matthew P. Halsall ◽  
Uschi Bangert ◽  
Alan Harvey ◽  
Philip Dawson ◽  
...  

AbstractWe report optical and scanning transmission electron microscopy studies of germanium dots grown on silicon. In an attempt to control the self-organized growth process and promote dot size uniformity the dot layers were grown on a 4.5nm Si0.6Ge0.4 alloy template layer. Photoluminescence results indicate the formation of carrier confining Ge rich islands, whilst Raman scattering results indicate the presence of an alloy throughout the structures formed. The samples were studied in the UK high resolution scanning transmission electron microscopy facility at Liverpool, UK. Energy dispersive analysis of individual line scans through the sample show that the structures are composed of an alloy throughout with an asymmetric distribution of Germanium in the dots and in the wetting layer close to the dots. We discuss the results in the light of the proposed growth mode for these dots and conclude that attempts to manipulate the composition of these dots during growth may be problematic due to the self-organized nature of their formation.


2010 ◽  
Vol 16 (S2) ◽  
pp. 1116-1117
Author(s):  
PJ Kempen ◽  
AS Thakor ◽  
CL Zavaleta ◽  
SS Gambhir ◽  
R Sinclair

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


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