The propagation of electrons in a strained metallic lattice

The propagation of electrons in a strained metallic medium is studied by a perturbation technique in which the perturbing potential is proportional to the elastic strain and not, as in the usual treatment, to the displacement. For slowly varying strains the perturbing potential is a deformation potential of the type introduced by Bardeen & Shockley (1950), in which the periodicity of the lattice does not appear explicitly. In the approximation of nearly free electrons, the contribution of the ionic lattice to the deformation potential depends only on the dilatation and not on the shear components. This potential is modified by a flow of electrons from the compressed regions of the lattice to the expanded regions. The resulting potential depends only on the Fermi energy of the electrons and not on their interaction with the lattice of ions. In a higher approximation, the effective mass of the electrons depends on their interaction with the ionic lattice. The contribution of this term is comparable with that already considered, and the shear components of the strain also influence the deformation potential. The method is applied to estimate the electrical resistivity produced by dislocations of edge and screw types present in sodium and copper. In copper screw dislocations add appreciably to the total resistivity.

2011 ◽  
Vol 181-182 ◽  
pp. 388-392
Author(s):  
Jian Jun Song ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Hui Yong Hu

Applying KP theory combined with deformation potential we obtained the valence band structure, and based on this result we calculated the orientation-dependent effective mass which is also called conductivity effective mass in strained Si1-xGex/(001)Si in this research, and furthermore ,we established the scattering rate model by using the density-of-states effective mass. On the basis of conductivity effective mass and scattering rate model, utilizing analytical method and relaxation time approximation we obtained the dependence of the value of hole mobility on stress and doping concentration in strained Si1-xGex/(001)Si along different crystal orientations. Compare to the unstrained Si, the anisotropy of hole mobility is more obvious in strained Si1-xGex/(001)Si, for example, It shows that under the same stress and doping concentration (Ni=1x1014cm-3, x=0.4), the value of hole mobility along [010] crystal orientation is visibly higher than other crystal orientations. This result can provide valuable references to the research of hole mobility of strained Si1-xGex materials and the design of devices.


Exact expressions, valid for all temperatures, are obtained in the form of infinite determinants for the electrical conductivity, the thermal conductivity and the thermo-electric power of a degenerate gas of quasi-free electrons interacting with the ionic lattice of a metal. It is shown that the values of the electrical and thermal conductivities, in general, exceed the values given by the approximate interpolation formulae due to Bloch (1930), Wilson (1937) and others, and, in particular, that the Grüneisen-Bloch formula for the ideal electrical resistance is appreciably in error in the region close to the Debye temperature. It is further shown that the residual and ideal resistances of an impure metal are not strictly additive in the region where the two are of the same order of magnitude. The behaviour of the thermal conductivity is shown to agree qualitatively with the discussion based on Wilson’s formula given by Makinson (1938); the numerical values of the thermal conductivity, however, are increased appreciably, particularly for an ideal metal at low temperatures. The thermo-electric power is also discussed, but no simple results can be given for the intermediate temperature range.


1997 ◽  
Vol 468 ◽  
Author(s):  
M. Leszczyński ◽  
J. Bąk-Misiuk ◽  
J. Domagała ◽  
T. Suski

ABSTRACTLattice parameters of semiconductors depend on the concentration of free electrons via the deformation potentials of the occupied minima of the conduction bands. In the presented work we examined the lattice parameters of variously doped GaN samples (epitaxial layers on sapphire and on SiC, bulk crystals grown at high hydrostatic pressure and homoepitaxial layers). The following dopants were used: Si, Mg and O. The measurements were performed using high resolution X-ray diffractometry. The results indicate that free electrons expand the lattice what confirms a negative value of the deformation potential of the Γ minimum of the conduction band. However, for Mg-doping (acceptor) we observed the lattice expansion as well. This violates the Vegard's law, as Mg ions are smaller than Ga ions.


2017 ◽  
Vol 30 (2) ◽  
pp. 025702 ◽  
Author(s):  
M Ghafari ◽  
W D Hutchison ◽  
S J Campbell ◽  
H Gleiter ◽  
H Hahn ◽  
...  

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