Commentary on local densities of states, surface bonds and rate processes

Although the main part of the title of this meeting is ‘ Studies of the surfaces of solids by electron spectroscopy’, the papers presented also cover some of the wider aspects of these studies, and I wish to pursue some of these here. I remark first that most of the systems studied by surface-sensitive spectroscopies are not technologically important, or even interesting in their own right. What makes them important and interesting is that the solids studied are, or are related to, catalysts, and the adsorbates studied are reactants, products or intermediates in important catalytic reactions. Consequently I ask the question: what is the relevance to catalysis of studies of structure, and bonding at solid surfaces? From among the many answers that might be given, I select two.

1986 ◽  
Vol 77 ◽  
Author(s):  
N. A. Burnhara ◽  
R. F. Fisher ◽  
S. E. Asher ◽  
L. L. Kazmerski ◽  
G. Lucovsky ◽  
...  

ABSTRACTSilicon core and valence levels were studied in hydrogenated amorphous silicon (a-Si:H) as a function of hydrogen concentration. The techniques used to establish the core levels were X-ray Photoelectron Spectroscopy and core-level Electron Energy Loss Spectroscopy. Changes in the local densities of states of the silicon 3s and 3p levels were examined with Auger Electron Spectroscopy. The a-Si:H samples were grown by RF sputtering. Their hydrogen concentrations varied from zero to nearly fifteen percent.


1974 ◽  
Vol 13 (S2) ◽  
pp. 791 ◽  
Author(s):  
A. Preisinger ◽  
T. Tortschanoff ◽  
F. Viehböck ◽  
W. Weissmann

1989 ◽  
Vol 159 ◽  
Author(s):  
T. Motooka

ABSTRACTThe local densities of states (LDOS) of epitaxial SiO, layers on Si(100) surfaces have been calculated using the recursion method combined with the Harrison's universal tight-binding model. The interface states associated with strained epitaxial layers of β-cristobalite (√2×√2)R45° and tridymite (1010)<0001> || Si(100)<011> were examined. In the β-cristobalite layer, gap states due to the surface Si dangling bonds appeared while they were eliminated by H termination. In the tridymite layer, the interface states primarily composed of the surface Si back bonds appeared near the Si conduction band minimum. Comparing the calculated DOS with photoelectron spectra for initial oxidation processes of clean Si(100), it was found that the valence band spectrum from the initial oxide formed at ∼300°C resembled that of the β-cristobalite layer.


1981 ◽  
Vol 106 (1-3) ◽  
pp. A188
Author(s):  
G. de Meyer ◽  
R. Hoogewijs ◽  
W. Lambrecht ◽  
J. Vennik ◽  
G. Dalmai

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