Core and Valence Levels in Hydrogemated Amorphous Silicon

1986 ◽  
Vol 77 ◽  
Author(s):  
N. A. Burnhara ◽  
R. F. Fisher ◽  
S. E. Asher ◽  
L. L. Kazmerski ◽  
G. Lucovsky ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Rf Sputtering ◽  
X Ray ◽  
The Core ◽  
Densities Of States ◽  
Local Densities ◽  
Electron Energy Loss ◽  
Hydrogenated Amorphous

ABSTRACTSilicon core and valence levels were studied in hydrogenated amorphous silicon (a-Si:H) as a function of hydrogen concentration. The techniques used to establish the core levels were X-ray Photoelectron Spectroscopy and core-level Electron Energy Loss Spectroscopy. Changes in the local densities of states of the silicon 3s and 3p levels were examined with Auger Electron Spectroscopy. The a-Si:H samples were grown by RF sputtering. Their hydrogen concentrations varied from zero to nearly fifteen percent.

Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

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