Wigner’s infinite-product representation of theRmatrix: Rederivation, interpretation, and potential applications

1986 ◽  
Vol 34 (3) ◽  
pp. 1896-1904 ◽  
Author(s):  
E. J. Robinson
2012 ◽  
Vol 17 (5) ◽  
pp. 618-629
Author(s):  
Hamidreza Marasi ◽  
Aliasghar Jodayree Akbarfam

In this paper the differential equation y″ + (ρ 2 φ 2 (x) –q(x))y = 0 is considered on a finite interval I, say I = [0, 1], where q is a positive sufficiently smooth function and ρ 2 is a real parameter. Also, [0, 1] contains a finite number of zeros of φ 2 , the so called turning points, 0 < x 1 < x 2 < … < x m < 1. First we obtain the infinite product representation of the solution. The product representation, satisfies in the original equation. As a result the associated dual equation is derived and then we proceed with the solution of the inverse problem.


2011 ◽  
Vol 54 (3) ◽  
pp. 506-518 ◽  
Author(s):  
A. Neamaty ◽  
S. Mosazadeh

AbstractIn this paper, we are going to investigate the canonical property of solutions of systems of differential equations having a singularity and turning point of even order. First, by a replacement, we transform the system to the Sturm–Liouville equation with turning point. Using of the asymptotic estimates provided by Eberhard, Freiling, and Schneider for a special fundamental system of solutions of the Sturm–Liouville equation, we study the infinite product representation of solutions of the systems. Then we transform the Sturm–Liouville equation with turning point to the equation with singularity, then we study the asymptotic behavior of its solutions. Such representations are relevant to the inverse spectral problem.


2018 ◽  
Vol 33 (30) ◽  
pp. 1850179
Author(s):  
A. A. Bytsenko ◽  
M. Chaichian ◽  
A. E. Gonçalves

In this paper we briefly review the main idea of the localization technique and its extension suitable in supersymmetric gauge field theory. We analyze the partition function of the vector multiplets with supercharges and its blocks on the even- and odd-dimensional spheres and squashed spheres. We exploit the so-called Faà di Bruno’s formula and show that multipartite partition functions can be written in the form of expansion series of the Bell polynomials. Applying the restricted specialization argument we show that q-infinite-product representation of partition functions admits presentation in terms of the Patterson–Selberg (or the Ruelle-type) spectral functions.


1987 ◽  
Vol 104 (1) ◽  
pp. 29-44 ◽  
Author(s):  
Arnold Knopfmacher ◽  
John Knopfmacher

1967 ◽  
Vol 63 (1) ◽  
pp. 141-146 ◽  
Author(s):  
Laurence S. Hall

AbstractMethods are developed for the computation of the complex zeros of (½z)−νJν(z) when the index ν is an arbitrary complex number. These methods, which do not require an explicit knowledge of the Jv(z), are susceptible to rapid numerical evaluation on a computer. Beyond the interest in the zeros in their own right, these methods now make feasible the use of the infinite product representation of Jν(z) for the rapid computation of Bessel functions of complex order.


2015 ◽  
Vol 59 (3) ◽  
pp. 569-579 ◽  
Author(s):  
Árpád Baricz ◽  
Stamatis Koumandos

AbstractIn this paper certain Turán-type inequalities for some Lommel functions of the first kind are deduced. The key tools in our proofs are the infinite product representation for these Lommel functions of the first kind, a classical result of Pólya on the zeros of some particular entire functions, and the connection of these Lommel functions with the so-called Laguerre–Pólya class of entire functions. Moreover, it is shown that in some cases Steinig's results on the sign of Lommel functions of the first kind combined with the so-called monotone form of l’Hospital's rule can be used in the proof of the corresponding Turán-type inequalities.


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.


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