Electron correlations and spin-orbit interaction in two-photon ionization of closed-shell atoms: A relativistic time-dependent Dirac-Fock approach

1990 ◽  
Vol 42 (7) ◽  
pp. 3801-3818 ◽  
Author(s):  
Michael G. J. Fink ◽  
Walter R. Johnson
Keyword(s):  
Closed Shell ◽  
Orbit Interaction ◽  
Time Dependent ◽  
Spin Orbit ◽  
Electron Correlations ◽  
Spin Orbit Interaction ◽  
Two Photon ◽  
Relativistic Time ◽  
Photon Ionization

Design of spin-forbidden transitions for polypyridyl metal complexes by time-dependent density functional theory including spin–orbit interaction

2016 ◽  
Vol 18 (21) ◽  
pp. 14466-14478 ◽  
Author(s):  
Shohei Kanno ◽  
Yutaka Imamura ◽  
Masahiko Hada
Keyword(s):  
Density Functional Theory ◽  
Metal Complexes ◽  
Density Functional ◽  
Orbit Interaction ◽  
Time Dependent ◽  
Spin Orbit ◽  
Functional Theory ◽  
Spin Orbit Interaction ◽  
Forbidden Transitions ◽  
Dependent Density

We explore spin-forbidden transitions for a Ru dye with an N3 skeleton and an Fe dye with a DX1 skeleton by time-dependent density functional theory with spin–orbit interaction.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines
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