scholarly journals Atom chips with two-dimensional electron gases: Theory of near-surface trapping and ultracold-atom microscopy of quantum electronic systems

2011 ◽  
Vol 83 (2) ◽  
Author(s):  
G. Sinuco-León ◽  
B. Kaczmarek ◽  
P. Krüger ◽  
T. M. Fromhold
Keyword(s):  
Ultracold Atom ◽  
Electronic Systems ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Near Surface ◽  
Atom Chips ◽  
Quantum Electronic

scholarly journals Atom chips with free-standing two-dimensional electron gases: advantages and challenges

2018 ◽  
Vol 65 (5-6) ◽  
pp. 677-692
Author(s):  
G. A. Sinuco-León ◽  
P. Krüger ◽  
T. M. Fromhold
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Free Standing ◽  
Electron Gases ◽  
Atom Chips

Electronic structure of two-dimensional electron gases at differently prepared indium arsenide surfaces

2021 ◽  
Vol 555 ◽  
pp. 149516
Author(s):  
Jacek J. Kolodziej ◽  
Dawid Wutke ◽  
Jakub Lis ◽  
Natalia Olszowska
Keyword(s):  
Electronic Structure ◽  
Indium Arsenide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Temperature studies of the tunnelling between parallel two-dimensional electron gases

1996 ◽  
Vol 40 (1-8) ◽  
pp. 413-415 ◽  
Author(s):  
N Turner ◽  
J.T Nicholls ◽  
E.H Linfield ◽  
K.M Brown ◽  
M Pepper ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

2021 ◽  
Vol 5 (6) ◽  
Author(s):  
Ting-Ting Wang ◽  
Sining Dong ◽  
Zhi-Li Xiao ◽  
Chong Li ◽  
Wen-Cheng Yue ◽  
...  
Keyword(s):  
Interface Roughness ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

scholarly journals Relevance of weak and strong classical scattering for the giant negative magnetoresistance in two-dimensional electron gases

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
B. Horn-Cosfeld ◽  
J. Schluck ◽  
J. Lammert ◽  
M. Cerchez ◽  
T. Heinzel ◽  
...  
Keyword(s):  
Negative Magnetoresistance ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases

Radiative Recombination between Two Dimensional Electron Gas and Photoexcited Holes in Modulation-doped AlxGa1−xN/GaN Heterostructures

1999 ◽  
Vol 595 ◽  
Author(s):  
B. Shen ◽  
T. Someya ◽  
O. Moriwaki ◽  
Y. Arakawa
Keyword(s):  
Radiative Recombination ◽  
Electron Gas ◽  
Excitation Intensity ◽  
Energy Separation ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Peak Energy ◽  
Dimensional Electron Gas ◽  
Increasing Temperature

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.

Curved two-dimensional electron gases

2003 ◽  
Vol 33 (5-6) ◽  
pp. 347-356 ◽  
Author(s):  
Axel Lorke ◽  
Stefan Böhm ◽  
Werner Wegscheider
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases
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