Fermi surface nesting and intrinsic resistivity of beryllium: First-principles calculations

2019 ◽  
Vol 100 (4) ◽  
Author(s):  
Zhe Liu ◽  
Mingfeng Zhu ◽  
Yisong Zheng



1997 ◽  
Vol 475 ◽  
Author(s):  
L. Szunyogh ◽  
B.L. Györffy

ABSTRACTThe interaction of a magnetic (Fe) impurity with the surface of a non-magnetic (Au) semi-infinite host is investigated in terms of fully relativistic spin-polarized first principles calculations. It is shown that the surface induces a magnetic anisotropy on the impurity which is considerably larger than in the bulk. It is also found that the anisotropy constant K(d) is an oscillating function of the distance d between the impurity and the surface with an amplitude which falls as 1/d2 and a period which is determined by the shape of the Fermi Surface of the bulk Au host. However, the question still remains open whether the magnitude of the anisotropy energy is sufficiently large to explain the thickness dependence of the Kondo amplitude B in thin films of dilute FecAu1-c alloys.



2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Yanwei Cui ◽  
Siqi Wu ◽  
Qinqing Zhu ◽  
Guorui Xiao ◽  
Bin Liu ◽  
...  

AbstractSuperconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re3Ge7, which undergoes a second-order metal–insulator-like transition at ~58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re3Ge7−xGax. As a consequence, the phase transition is gradually suppressed and disappears above x = 0.2. At this x value, superconductivity emerges and Tc exhibits a dome-like doping dependence with a maximum value of 3.37 K at x = 0.25. First principles calculations suggest that the phase transition in Re3Ge7 is associated with an electronic instability driven by Fermi-surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re3Ge7 provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.





1997 ◽  
Vol 499 ◽  
Author(s):  
Daniel Sánchez-Portal ◽  
Carlos Untiedt ◽  
José M. Soler ◽  
Juan J. Sáenz ◽  
Nicolas Agraït

ABSTRACTIn this work we address the behaviour of electronic structure under uniaxial stress, by first-principles calculations and experiments of conductance in nanometer-sized metallic contactes of Au and Al. These contacts are shown to be specially suitable for this purpose. The conductance behaviour is related to the change with strain of Fermi surface. Both experimental and theoretically Au behaves like the free electron gas but Al has the opposite behaviour.





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