scholarly journals Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengths

2020 ◽  
Vol 101 (19) ◽  
Author(s):  
P. Holewa ◽  
M. Gawełczyk ◽  
C. Ciostek ◽  
P. Wyborski ◽  
S. Kadkhodazadeh ◽  
...  
2021 ◽  
Author(s):  
Molly A. May ◽  
Kyoung-Duck Park ◽  
Benjamin G. Whetten ◽  
David Fialkow ◽  
Jaron A. Kropp ◽  
...  

2012 ◽  
Vol 100 (26) ◽  
pp. 263101 ◽  
Author(s):  
J. Tatebayashi ◽  
Y. Ota ◽  
S. Ishida ◽  
M. Nishioka ◽  
S. Iwamoto ◽  
...  

2009 ◽  
Author(s):  
A. Lochmann ◽  
E. Stock ◽  
M. C. Münnix ◽  
J. A. Töfflinger ◽  
W. Unrau ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 916
Author(s):  
Maxim Rakhlin ◽  
Sergey Sorokin ◽  
Dmitrii Kazanov ◽  
Irina Sedova ◽  
Tatiana Shubina ◽  
...  

We report on single photon emitters for the green-yellow spectral range, which comprise a CdSe/ZnSe quantum dot placed inside a semiconductor tapered nanocolumn acting as a multimode nanoantenna. Despite the presence of many optical modes inside, such a nanoantenna is able to collect the quantum dot radiation and ensure its effective output. We demonstrate periodic arrays of such emitters, which are fabricated by focused ion beam etching from a II-VI/III-V heterostructure grown using molecular beam epitaxy. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 5 MHz with the second-order correlation function g(2)(0) = 0.25 at 220 K. Such single photon emitters are promising for secure free space optical communication lines.


2009 ◽  
Vol 80 (16) ◽  
Author(s):  
A. K. Nowak ◽  
E. Gallardo ◽  
D. Sarkar ◽  
H. P. van der Meulen ◽  
J. M. Calleja ◽  
...  

2006 ◽  
Vol 935 ◽  
Author(s):  
William Kerr ◽  
Valeria Gabriela Stoleru ◽  
Anup Pancholi

ABSTRACTWe investigate experimentally and theoretically optical and electronic properties of In0.3Ga0.7As/GaAs quantum dot molecules (QDMs) formed by two layers of self-assembled, vertically stacked quantum dots (QDs). Structures with In0.3Ga0.7As/GaAs QD layers separated by a thin GaAs barrier were grown by solid source molecular beam epitaxy, and were characterized by time-integrated photoluminescence (PL). For the temperature-dependent PL measurements a He-flow optical cryostat was used to control the temperature between 4 and 300 K. The experimentally observed behavior is in good agreement with that expected from our eight-band k·p calculations. Optical and electronic properties of these QDMs are further compared with those of dots grown under conditions that did not promote vertical organization.


Quantum dot defines as a nanoparticle with particle size smaller than its exciton Bohr radius. Due to the remarkable quantum effects such as optical and electronic properties, they have attracted a great deal of attention by researchers and industries. Therefore, quantum dots have become a major topic in nano-technology. Here, we describe the most recent eco-friendly techniques that have been used to synthesize quantum dots, including biogenic methods, such as plant-mediated, microorganisms-mediated methods, wet chemical and solid-state methods.


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