Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

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Absorption and Emission of Light in Quantum Structures

Bands and Photons in III-V Semiconductor Quantum Structures ◽

10.1093/oso/9780198767275.003.0011 ◽

2020 ◽

pp. 343-418

Author(s):

Vurgaftman Igor

Keyword(s):

Quantum Wells ◽

Radiative Recombination ◽

Quantum Wires ◽

Incident Light ◽

Optical Gain ◽

Two Dimensional ◽

Intersubband Transitions ◽

Recombination Rates ◽

Zinc Blende ◽

Two Dimensional Materials

This chapter shows how to calculate the absorption coefficient, optical gain, and radiative recombination rates in quantum wells and superlattices. A detailed treatment of both interband and intersubband transitions is presented, and their differences and similarities are considered in detail. The optical properties of wurtzite quantum wells and zinc-blende quantum wires and dots are also discussed. Finally, the interaction of excitonic transitions with incident light in quantum wells is considered as a model for other two-dimensional materials.

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Many-Body Optical Gain in Zinc-Blende GaN/AlGaN Quantum Wells with (001), (111) and (110) Crystal Orientations

Journal of the Korean Physical Society ◽

10.3938/jkps.52.673 ◽

2008 ◽

Vol 52 (3) ◽

pp. 673-677 ◽

Cited By ~ 1

Author(s):

Seoung-Hwan Park

Keyword(s):

Quantum Wells ◽

Optical Gain ◽

Many Body ◽

Zinc Blende ◽

Crystal Orientations

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General condition for realizing a collinear spin-orbit effective magnetic field in two-dimensional electron systems and its application to zinc-blende and wurtzite quantum wells

Physical Review B ◽

10.1103/physrevb.99.035305 ◽

2019 ◽

Vol 99 (3) ◽

Cited By ~ 1

Author(s):

A. S. Kozulin ◽

A. I. Malyshev

Keyword(s):

Magnetic Field ◽

Quantum Wells ◽

General Condition ◽

Effective Magnetic Field ◽

Spin Orbit ◽

Two Dimensional ◽

Electron Systems ◽

Dimensional Electron ◽

Zinc Blende ◽

Two Dimensional Electron Systems

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States of direct and indirect excitons in strained zinc-blende GaN/InGaN asymmetric quantum wells

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.10.017 ◽

2017 ◽

Vol 112 ◽

pp. 574-583 ◽

Cited By ~ 3

Author(s):

J.G. Rojas-Briseño ◽

J.C. Martínez-Orozco ◽

M.E. Mora-Ramos

Keyword(s):

Quantum Wells ◽

Indirect Excitons ◽

Zinc Blende ◽

Asymmetric Quantum

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Band alignment in quantum wells from automatically tuned DFT+U

Physical Chemistry Chemical Physics ◽

10.1039/c9cp00122k ◽

2019 ◽

Vol 21 (11) ◽

pp. 5966-5973 ◽

Cited By ~ 2

Author(s):

Grigory Kolesov ◽

Chungwei Lin ◽

Andrew Knyazev ◽

Keisuke Kojima ◽

Joseph Katz ◽

...

Keyword(s):

Quantum Wells ◽

Band Alignment ◽

Bulk Properties ◽

Band Offsets ◽

Zinc Blende

Accurate band offsets in III–V zinc blende-alloy quantum wells were obtained computationally with the DFT+U method automatically tuned to reproduce bulk properties.

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