Many-Body Optical Gain in Zinc-Blende GaN/AlGaN Quantum Wells with (001), (111) and (110) Crystal Orientations

2008 ◽  
Vol 52 (3) ◽  
pp. 673-677 ◽  
Author(s):  
Seoung-Hwan Park
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Many Body ◽  
Zinc Blende ◽  
Crystal Orientations

Absorption and Emission of Light in Quantum Structures

2020 ◽  
pp. 343-418
Author(s):  
Vurgaftman Igor
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Quantum Wires ◽  
Incident Light ◽  
Optical Gain ◽  
Two Dimensional ◽  
Intersubband Transitions ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Two Dimensional Materials

This chapter shows how to calculate the absorption coefficient, optical gain, and radiative recombination rates in quantum wells and superlattices. A detailed treatment of both interband and intersubband transitions is presented, and their differences and similarities are considered in detail. The optical properties of wurtzite quantum wells and zinc-blende quantum wires and dots are also discussed. Finally, the interaction of excitonic transitions with incident light in quantum wells is considered as a model for other two-dimensional materials.

Optical gain in GaN quantum wells with many-body effects

1999 ◽  
Vol 60 (24) ◽  
pp. 16675-16679 ◽  
Author(s):  
G. B. Ren ◽  
Peter Blood
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Many Body ◽  
Many Body Effects

Excitonic Enhanced Optical Gain Of GaN/AlGaN Quantum Wells With Localized States

1997 ◽  
Vol 482 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Wells ◽  
Carrier Density ◽  
Optical Gain ◽  
Localized States ◽  
Many Body ◽  
Quantum Well Structures ◽  
The Many ◽  
Temperature Green’S Function

AbstractWe have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states axe introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.

Gain characteristics of GaN quantum wells including many body effects

1995 ◽  
Vol 31 (14) ◽  
pp. 1149 ◽  
Author(s):  
P. Rees ◽  
C. Cooper ◽  
P. Blood ◽  
P.M. Smowton ◽  
J. Hegarty
Keyword(s):  
Quantum Wells ◽  
Many Body ◽  
Many Body Effects

Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure

2015 ◽  
Vol 252 (4) ◽  
pp. 670-677 ◽  
Author(s):  
C. M. Duque ◽  
A. L. Morales ◽  
M. E. Mora-Ramos ◽  
C. A. Duque
Keyword(s):  
Optical Properties ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Zinc Blende ◽  
Ingan Quantum Wells

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

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