scholarly journals Geometrical Hall effect and momentum-space Berry curvature from spin-reversed band pairs

2021 ◽  
Vol 103 (4) ◽  
Author(s):  
Max Hirschberger ◽  
Yusuke Nomura ◽  
Hiroyuki Mitamura ◽  
Atsushi Miyake ◽  
Takashi Koretsune ◽  
...  
2019 ◽  
Vol 99 (14) ◽  
Author(s):  
Praveen Vir ◽  
Jacob Gayles ◽  
A. S. Sukhanov ◽  
Nitesh Kumar ◽  
Françoise Damay ◽  
...  

2018 ◽  
Vol 5 (6) ◽  
Author(s):  
Xiaokang Li ◽  
Liangcai Xu ◽  
Huakun Zuo ◽  
Alaska Subedi ◽  
Zengwei Zhu ◽  
...  

Mn_{3}3X (X= Sn, Ge) are noncollinear antiferromagnets hosting a large anomalous Hall effect (AHE). Weyl nodes in the electronic dispersions are believed to cause this AHE, but their locus in the momentum space is yet to be pinned down. We present a detailed study of the Hall conductivity tensor and magnetization in Mn_{3}3Sn crystals and find that in the presence of a moderate magnetic field, spin texture sets the orientation of the kk-space Berry curvature with no detectable in-plane anisotropy due to the Z_6Z6 symmetry of the underlying lattice. We quantify the energy cost of domain nucleation and show that the multidomain regime is restricted to a narrow field window. Comparing the field dependence of AHE and magnetization, we find that there is a distinct component in the AHE which does not scale with magnetization when the domain walls are erected. This so-called ‘topological’ Hall effect provides indirect evidence for a non-coplanar spin components and real-space Berry curvature in domain walls.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  

2019 ◽  
Vol 100 (5) ◽  
Author(s):  
Benedikt Ernst ◽  
Roshnee Sahoo ◽  
Yan Sun ◽  
Jayita Nayak ◽  
Lukas Müchler ◽  
...  

2020 ◽  
Vol 45 (24) ◽  
pp. 6740
Author(s):  
Lei Cai ◽  
Shuang Zhang ◽  
Wenguo Zhu ◽  
Hao Wu ◽  
Huadan Zheng ◽  
...  

2015 ◽  
Vol 112 (35) ◽  
pp. 10879-10883 ◽  
Author(s):  
Justin C. W. Song ◽  
Polnop Samutpraphoot ◽  
Leonid S. Levitov

We outline a designer approach to endow widely available plain materials with topological properties by stacking them atop other nontopological materials. The approach is illustrated with a model system comprising graphene stacked atop hexagonal boron nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The nonlocal electrical response mediated by such currents provides diagnostics for band topology.


Sign in / Sign up

Export Citation Format

Share Document