Exciton recombination and spin relaxation in strong magnetic fields in ultrathin (In,Al)As/AlAs quantum wells with indirect band gap and type-I band alignment

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
T. S. Shamirzaev ◽  
J. Rautert ◽  
D. R. Yakovlev ◽  
M. Bayer
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Band Gap ◽  
Spin Relaxation ◽  
Band Alignment ◽  
Type I ◽  
Strong Magnetic Fields ◽  
Exciton Recombination ◽  
Indirect Band Gap

Recombination and spin dynamics of excitons in thin (Ga,Al)(Sb,As)/AlAs quantum wells with an indirect band gap and type-I band alignment

2020 ◽  
Vol 102 (16) ◽  
Author(s):  
T. S. Shamirzaev ◽  
D. R. Yakovlev ◽  
A. K. Bakarov ◽  
N. E. Kopteva ◽  
D. Kudlacik ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Spin Dynamics ◽  
Band Alignment ◽  
Type I ◽  
Indirect Band Gap

scholarly journals Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
T. S. Shamirzaev ◽  
J. Debus ◽  
D. S. Abramkin ◽  
D. Dunker ◽  
D. R. Yakovlev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Band Alignment ◽  
Type I ◽  
Exciton Recombination ◽  
Indirect Band Gap ◽  
Recombination Dynamics

Spin relaxation of negatively charged excitons in (In,Al)As/AlAs quantum dots with indirect band gap and type-I band alignment

2012 ◽  
Vol 101 (14) ◽  
pp. 142108 ◽  
Author(s):  
D. Dunker ◽  
T. S. Shamirzaev ◽  
J. Debus ◽  
D. R. Yakovlev ◽  
K. S. Zhuravlev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Spin Relaxation ◽  
Band Alignment ◽  
Type I ◽  
Indirect Band Gap

scholarly journals Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment

2019 ◽  
Vol 99 (19) ◽  
Author(s):  
J. Rautert ◽  
T. S. Shamirzaev ◽  
S. V. Nekrasov ◽  
D. R. Yakovlev ◽  
P. Klenovský ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Band Alignment ◽  
Type I ◽  
Optical Orientation ◽  
Indirect Band Gap

Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells

1998 ◽  
Vol 533 ◽  
Author(s):  
R. Hartmann ◽  
U. Gennser ◽  
D. Grützmacher ◽  
H. Sigg ◽  
E. Müller ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Valence Band ◽  
Band Alignment ◽  
Multiple Quantum ◽  
Type I ◽  
Strain Compensation ◽  
Quantum Well States ◽  
Good Agreement

AbstractThe effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.

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