Recombination and spin dynamics of excitons in thin (Ga,Al)(Sb,As)/AlAs quantum wells with an indirect band gap and type-I band alignment

2020 ◽  
Vol 102 (16) ◽  
Author(s):  
T. S. Shamirzaev ◽  
D. R. Yakovlev ◽  
A. K. Bakarov ◽  
N. E. Kopteva ◽  
D. Kudlacik ◽  
...  
2019 ◽  
Vol 99 (19) ◽  
Author(s):  
J. Rautert ◽  
T. S. Shamirzaev ◽  
S. V. Nekrasov ◽  
D. R. Yakovlev ◽  
P. Klenovský ◽  
...  

1998 ◽  
Vol 533 ◽  
Author(s):  
R. Hartmann ◽  
U. Gennser ◽  
D. Grützmacher ◽  
H. Sigg ◽  
E. Müller ◽  
...  

AbstractThe effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.


2011 ◽  
Vol 84 (15) ◽  
Author(s):  
T. S. Shamirzaev ◽  
J. Debus ◽  
D. S. Abramkin ◽  
D. Dunker ◽  
D. R. Yakovlev ◽  
...  

2012 ◽  
Vol 101 (14) ◽  
pp. 142108 ◽  
Author(s):  
D. Dunker ◽  
T. S. Shamirzaev ◽  
J. Debus ◽  
D. R. Yakovlev ◽  
K. S. Zhuravlev ◽  
...  

2021 ◽  
Vol 9 ◽  
Author(s):  
Razvan Krause ◽  
Mariana Chávez-Cervantes ◽  
Sven Aeschlimann ◽  
Stiven Forti ◽  
Filippo Fabbri ◽  
...  

Efficient light harvesting devices need to combine strong absorption in the visible spectral range with efficient ultrafast charge separation. These features commonly occur in novel ultimately thin van der Waals heterostructures with type II band alignment. Recently, ultrafast charge separation was also observed in monolayer WS2/graphene heterostructures with type I band alignment. Here we use time- and angle-resolved photoemission spectroscopy to show that ultrafast charge separation also occurs at the interface between bilayer WS2 and graphene indicating that the indirect band gap of bilayer WS2 does not affect the charge transfer to the graphene layer. The microscopic insights gained in the present study will turn out to be useful for the design of novel optoelectronic devices.


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