A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN
                    
                      x
                    
                    As
                    
                      y
                    
                    P
                    
                      1–
                      x–y
                    
                    /GaP quantum wells on GaP substrates

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.

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Design of direct band gap type I GeSn/Ge quantum dots for mid-IR light emitters on Si substrate

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700047 ◽

2017 ◽

Vol 11 (5) ◽

pp. 1700047 ◽

Cited By ~ 6

Author(s):

Bouraoui Ilahi

Keyword(s):

Quantum Dots ◽

Band Gap ◽

Type I ◽

Si Substrate ◽

Light Emitters ◽

Direct Band Gap ◽

Direct Band ◽

Ge Quantum Dots ◽

Ir Light

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The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab5d89 ◽

2019 ◽

Vol 35 (2) ◽

pp. 025008 ◽

Cited By ~ 2

Author(s):

Qimiao Chen ◽

Lin Zhang ◽

Hao Zhou ◽

Wei Li ◽

Bong Kwon Son ◽

...

Keyword(s):

Quantum Dots ◽

Band Gap ◽

Conduction Band ◽

Band Offset ◽

Type I ◽

Direct Band Gap ◽

Conduction Band Offset ◽

Direct Band ◽

Cmos Compatible ◽

Ir Light

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Electronic Properties of Si - Ge Micro Nipi Structures

MRS Proceedings ◽

10.1557/proc-116-513 ◽

1988 ◽

Vol 116 ◽

Cited By ~ 1

Author(s):

L. H. Yang ◽

C. Y. Fong ◽

J. S. Nelson

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Real Space ◽

Band Alignment ◽

Charge Carriers ◽

Acceptor State ◽

Direct Band Gap ◽

N Doping ◽

Direct Band ◽

Donor State

AbstractElectronic properties of the n-doping--insulator--p-doping--insulator structures in ultra thin strained [001] Si - Ge superlattice have been studied theoretically. The Ge - layer is used as one of the insulating region. The Al and As atoms are treated as impurities. The superlattice ((Si)10 -(Ge)2) exhibits an indirect gap in reciprocal space and the staggered band alignment in real space. With doping, the samples show a direct band gap and staggered band alignment. The acceptor state is associated with the Al-Si bonding state, while the donor state is derived from the As s-like state. The separation of the charge carriers in the real space can be obtained.

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Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells

MRS Proceedings ◽

10.1557/proc-533-251 ◽

1998 ◽

Vol 533 ◽

Author(s):

R. Hartmann ◽

U. Gennser ◽

D. Grützmacher ◽

H. Sigg ◽

E. Müller ◽

...

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Band Gap ◽

Valence Band ◽

Band Alignment ◽

Multiple Quantum ◽

Type I ◽

Strain Compensation ◽

Quantum Well States ◽

Good Agreement

AbstractThe effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.

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