Polaritons in semiconductor multilayered materials

1988 ◽  
Vol 38 (8) ◽  
pp. 5438-5452 ◽  
Author(s):  
Alain Dereux ◽  
Jean-Pol Vigneron ◽  
Philippe Lambin ◽  
Amand A. Lucas
Keyword(s):  
Multilayered Materials

HRTEM simulation of interfacial structure in amorphous multilayers

1989 ◽  
Vol 47 ◽  
pp. 466-467
Author(s):  
Margaret L. Sattler ◽  
Michael A. O'Keefe
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Multilayer Sample ◽  
Resolution Electron ◽  
Multilayered Materials ◽  
Simulated Images

Multilayered materials have been fabricated with such high perfection that individual layers having two atoms deep are possible. Characterization of the interfaces between these multilayers is achieved by high resolution electron microscopy and Figure 1a shows the cross-section of one type of multilayer. The production of such an image with atomically smooth interfaces depends upon certain factors which are not always reliable. For example, diffusion at the interface may produce complex interlayers which are important to the properties of the multilayers but which are difficult to observe. Similarly, anomalous conditions of imaging or of fabrication may occur which produce images having similar traits as the diffusion case above, e.g., imaging on a tilted/bent multilayer sample (Figure 1b) or deposition upon an unaligned substrate (Figure 1c). It is the purpose of this study to simulate the image of the perfect multilayer interface and to compare with simulated images having these anomalies.

Study of the reflective characteristics of multilayered materials

2015 ◽  
Vol 44 (8) ◽  
pp. 687-697
Author(s):  
O. S. Sirotkin ◽  
V. V. Vozhdaev ◽  
L. L. Teperin
Keyword(s):  
Multilayered Materials
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