scholarly journals Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

1991 ◽  
Vol 58 (5) ◽  
pp. 478-480 ◽  
Author(s):  
C. R. Stanley ◽  
M. C. Holland ◽  
A. H. Kean ◽  
M. B. Stanaway ◽  
R. T. Grimes ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

1984 ◽  
Vol 44 (2) ◽  
pp. 240-242 ◽  
Author(s):  
B. J. Skromme ◽  
G. E. Stillman ◽  
A. R. Calawa ◽  
G. M. Metze
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

1987 ◽  
Vol 51 (11) ◽  
pp. 814-816 ◽  
Author(s):  
T. L. Lin ◽  
L. Sadwick ◽  
K. L. Wang ◽  
Y. C. Kao ◽  
R. Hull ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Electrical characterization of iodine doped molecular beam epitaxial ZnSe

1992 ◽  
Vol 117 (1-4) ◽  
pp. 320-323 ◽  
Author(s):  
J.M. Wallace ◽  
J. Simpson ◽  
S.Y. Wang ◽  
H. Stewart ◽  
J.J. Hunter ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Molecular Beam Epitaxial

Characterization of high‐purity Si‐doped molecular beam epitaxial GaAs

1985 ◽  
Vol 58 (12) ◽  
pp. 4685-4702 ◽  
Author(s):  
B. J. Skromme ◽  
S. S. Bose ◽  
B. Lee ◽  
T. S. Low ◽  
T. R. Lepkowski ◽  
...  
Keyword(s):  
High Purity ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Si Doped

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

1989 ◽  
Vol 18 (6) ◽  
pp. 757-761
Author(s):  
E. T. Croke ◽  
R. J. Hauenstein ◽  
C. W. Nieh ◽  
T. C. McGill
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial

Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

2016 ◽  
Vol 381 ◽  
pp. 32-35 ◽  
Author(s):  
Mitsuaki Yano ◽  
Kazuto Koike ◽  
Masayuki Matsuo ◽  
Takayuki Murayama ◽  
Yoshiyuki Harada ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Wo3 Thin Films
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