Electronic and Optical Properties of a-Si1−xCx:H Films Produced From Admixtures of Silane and Ditertiarybutylsilane

ABSTRACTWe investigated the optical and electronic properties of amorphous silicon carbide (a-Si1−xCx:H) films produced by plasma enhanced chemical vapor deposition from admixtures of silane and ditertiarybutylsilane [SiH2 (C4H9) 2 or DTBS] using photothermal deflection spectroscopy, electrical conductivity and its temperature dependence as well as photoconductivity. These a-Si1−xCx:H films exhibit low Urbach energies and high photoconductivities similar to films produced with other carbon feedstock sources. We also present our results for hydrogen diluted a-Si1−xCx:H films using DTBS as the carbon feedstock source.

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Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-012-0934-z ◽

2012 ◽

Vol 24 (4) ◽

pp. 1361-1368 ◽

Cited By ~ 16

Author(s):

Fatemeh Shariatmadar Tehrani ◽

Boon Tong Goh ◽

Muhamad Rasat Muhamad ◽

Saadah Abdul Rahman

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Optical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Structural And Optical Properties

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Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

Journal of Applied Physics ◽

10.1063/1.1500418 ◽

2002 ◽

Vol 92 (5) ◽

pp. 2937-2941 ◽

Cited By ~ 41

Author(s):

K. Chew ◽

Rusli ◽

S. F. Yoon ◽

J. Ahn ◽

V. Ligatchev ◽

...

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Hydrogen Dilution ◽

Hydrogenated Amorphous

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Effects of various substrate materials on microstructural and optical properties of amorphous silicon oxynitride thin films deposited by plasma-enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2020.138186 ◽

2020 ◽

Vol 709 ◽

pp. 138186

Author(s):

Liangyi Hang ◽

Weiguo Liu ◽

Junqi Xu ◽

Chen Yang ◽

Shun Zhou

Keyword(s):

Thin Films ◽

Optical Properties ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Oxynitride

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Room temperature process for chemical vapor deposition of amorphous silicon carbide thin film using monomethylsilane gas

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2011.09.037 ◽

2011 ◽

Vol 206 (6) ◽

pp. 1503-1506 ◽

Cited By ~ 6

Author(s):

Hitoshi Habuka ◽

Yusuke Ando ◽

Masaki Tsuji

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Room Temperature ◽

Chemical Vapor ◽

Amorphous Silicon Carbide

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Chemical vapor deposition of amorphous silicon carbide thin films on metal surfaces using monomethylsilane gas at low temperatures

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2012.11.078 ◽

2013 ◽

Vol 217 ◽

pp. 88-93 ◽

Cited By ~ 9

Author(s):

Hitoshi Habuka ◽

Masaki Tsuji

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Low Temperatures ◽

Metal Surfaces ◽

Chemical Vapor ◽

Amorphous Silicon Carbide

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Optimization of Optoelectronic Properties of a-SiC:H Films

MRS Proceedings ◽

10.1557/proc-297-681 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 1

Author(s):

F. Demichelis ◽

G. Crovini ◽

C.F. Pirri ◽

E. Tresso ◽

R. Galloni ◽

...

Keyword(s):

Electrical Conductivity ◽

Silicon Carbide ◽

Ftir Spectroscopy ◽

Amorphous Silicon ◽

Reflectance Spectroscopy ◽

High Hydrogen ◽

Hydrogen Dilution ◽

Photothermal Deflection Spectroscopy ◽

Device Structures ◽

Photothermal Deflection

Amorphous silicon carbide films have been deposited by PECVD in SiH4+CH4+H2 mixtures at different hydrogen dilutions. The optoelecuonic properties of the films have been measured by transmittance-reflectance spectroscopy, photothermal deflection spectroscopy and photo and dark electrical conductivity. Structural properties have been obtained by FTIR spectroscopy. It was found that high hydrogen dilution leads to materials of improved quality, p-i-n device structures have been deposited with intrinsic layers at different hydrogen dilution levels.

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