Density of states near the Fermi level from measurements of variable-range-hopping magnetoresistance in germanium

1993 ◽  
Vol 48 (16) ◽  
pp. 11796-11803 ◽  
Author(s):  
I. S. Shlimak ◽  
M. J. Lea ◽  
P. Fozooni ◽  
P. Stefanyi ◽  
A. N. Ionov
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Variable Range Hopping ◽  
Variable Range

Magnetic field and temperature dependences of the electrical resistance of onion structure carbon

2010 ◽  
Vol 3 (2) ◽  
pp. 95-98
Author(s):  
Evgeny N. Tkachev ◽  
Anatoliy I. Romanenko ◽  
Olga B. Anikeeva ◽  
Timofey I. Buryakov ◽  
Kamil R. Zhdanov ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Physical Properties ◽  
Fermi Level ◽  
Density Of States ◽  
Electrical Resistance ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range ◽  
Localization Radius ◽  
Temperature Dependences

In this paper electro physical properties of samples of onion-like carbon have been investigated. Samples have been synthesized by method of thermal graphitization of nanodiamonds. 1D Mott variable-range hopping conductivity has been observed for temperature dependences of resistance of nanoonions volume samples at temperature range 4.2 K – 300 K. Also second-degree increase of positive magnetoresistance up to 6 tesla has been revealed. Some coefficients such as localization radius a, density of states on Fermi level N(EF) have been estimated.

Variable-range hopping conductivity in La1 xCaxMn1 yFeyO3: evidence of a complex gap in density of states near the Fermi level

2002 ◽  
Vol 14 (34) ◽  
pp. 8043-8055 ◽  
Author(s):  
R Laiho ◽  
K G Lisunov ◽  
E L hderanta ◽  
P A Petrenko ◽  
J Salminen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

scholarly journals MONTE CARLO SIMULATION OF VARIABLE RANGE HOPPING AT THE FERMI LEVEL

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-111-C4-114 ◽  
Author(s):  
G. Schönherr ◽  
H. Bässler ◽  
M. Silver
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Fermi Level ◽  
Variable Range Hopping ◽  
Variable Range

Hopping Conduction in Structures with Ge Nanoclusters Grown on Oxidized Si (001)

2016 ◽  
Vol 39 ◽  
pp. 178-188
Author(s):  
Vladimir Lysenko ◽  
Y.V. Gomeniuk ◽  
Valeriya N. Kudina ◽  
Nikolay Garbar ◽  
Sergey Kondratenko ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Fermi Level ◽  
Transport Mechanism ◽  
Surface Conductivity ◽  
Localized States ◽  
Band Width ◽  
Planar Geometry ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range

Conductivity and capacitance in structures with Ge nanoclusters grown on oxidized Si (001) with different morphology have been investigated for the temperature range 120-290 K and frequencies 1 kHz-1MHz in co-planar geometry. It was found that structures exhibited T-1/3 conductivity dependence. The Mott’s variable range hopping through quasi-band of localized states at the Fermi level of Ge nanoclusters and their interfaces was found to be the dominant transport mechanism in the surface conductivity channel. The quasi-band width depends of surface morphology varying in the range 110-130 meV, while the middle of the band is located at Ev+140 meV. The peak of reduced conductivity and capacitance were observed under conditions when Fermi level is in the middle of this band.

scholarly journals Investigation of single-domain Au silicide nanowires on Si(110) formed for Au coverages in the monolayer regime

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Stephan Appelfeller
Keyword(s):  
Fermi Level ◽  
Surface Structure ◽  
Density Of States ◽  
The Self ◽  
Single Domain ◽  
Photoemission Spectroscopy ◽  
Annealing Temperatures ◽  
Self Organized ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

AbstractThe self-organized formation of single domain Au silicide nanowires is observed on Si(110). These nanowires are analysed using scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as photoemission spectroscopy (PES). Core-level PES is utilised to confirm the formation of Au silicide and establish its presence as the top most surface structure, i.e., the nanowires. The growth of the Au silicide nanowires and their dimensions are studied by STM. They form for Au coverages of about 1 monolayer and are characterized by widths of about 2 to 3 nm and heights below 1 nm while reaching lengths exceeding 500 nm when choosing appropriate annealing temperatures. Valence band PES and STS indicate a small but finite density of states at the Fermi level typical for compound metals.

Mott variable range hopping transport in thermal evaporated vanadyl 2, 3 naphthalocyanine thin films

2021 ◽  
pp. 125029
Author(s):  
I. Dhanya ◽  
Malathy Krishnan ◽  
Reny Renji ◽  
M.K. Anu ◽  
Rachel G. Varghese ◽  
...  
Keyword(s):  
Thin Films ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range
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