Magnetic field and temperature dependences of the electrical resistance of onion structure carbon

2010 ◽  
Vol 3 (2) ◽  
pp. 95-98
Author(s):  
Evgeny N. Tkachev ◽  
Anatoliy I. Romanenko ◽  
Olga B. Anikeeva ◽  
Timofey I. Buryakov ◽  
Kamil R. Zhdanov ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Physical Properties ◽  
Fermi Level ◽  
Density Of States ◽  
Electrical Resistance ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range ◽  
Localization Radius ◽  
Temperature Dependences

In this paper electro physical properties of samples of onion-like carbon have been investigated. Samples have been synthesized by method of thermal graphitization of nanodiamonds. 1D Mott variable-range hopping conductivity has been observed for temperature dependences of resistance of nanoonions volume samples at temperature range 4.2 K – 300 K. Also second-degree increase of positive magnetoresistance up to 6 tesla has been revealed. Some coefficients such as localization radius a, density of states on Fermi level N(EF) have been estimated.

Variable-range hopping conductivity in La1 xCaxMn1 yFeyO3: evidence of a complex gap in density of states near the Fermi level

2002 ◽  
Vol 14 (34) ◽  
pp. 8043-8055 ◽  
Author(s):  
R Laiho ◽  
K G Lisunov ◽  
E L hderanta ◽  
P A Petrenko ◽  
J Salminen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

Transverse resistance in HoBa2Cu3O7−δ single crystals

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550232
Author(s):  
Ruslan V. Vovk ◽  
Georgij Ya. Khadzhai ◽  
Oleksandr V. Dobrovolskiy ◽  
Zarif F. Nazyrov ◽  
Alexander Chroneos
Keyword(s):  
Single Crystals ◽  
Electrical Resistance ◽  
Residual Resistivity ◽  
Variable Range Hopping ◽  
Fluctuation Conductivity ◽  
Hopping Conductivity ◽  
Variable Range ◽  
Temperature Range ◽  
Transverse Resistance ◽  
Semiconductor Character

The transverse electrical resistance of HoBa2Cu3O[Formula: see text] single crystals is investigated in the temperature range [Formula: see text] for optimally-doped [Formula: see text] and oxygen-poor [Formula: see text] samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near [Formula: see text], of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near [Formula: see text] transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types.

Density of states near the Fermi level from measurements of variable-range-hopping magnetoresistance in germanium

1993 ◽  
Vol 48 (16) ◽  
pp. 11796-11803 ◽  
Author(s):  
I. S. Shlimak ◽  
M. J. Lea ◽  
P. Fozooni ◽  
P. Stefanyi ◽  
A. N. Ionov
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Variable Range Hopping ◽  
Variable Range

Transverse conductivity and the pseudogap in YBCO single crystals irradiated with fast electrons

2019 ◽  
Vol 33 (20) ◽  
pp. 1950233
Author(s):  
G. Ya. Khadzhai ◽  
R. V. Vovk ◽  
Yu. V. Litvinov ◽  
V. V. Sklyar ◽  
O. V. Dobrovolskiy
Keyword(s):  
Single Crystals ◽  
Electrical Resistance ◽  
Irradiation Dose ◽  
Charge Carriers ◽  
Variable Range Hopping ◽  
Fast Electrons ◽  
Variable Range ◽  
Before And After ◽  
Temperature Dependences ◽  
Transverse Conductivity

Temperature dependences of the electrical resistance along the c-axis of [Formula: see text] single crystals are investigated before and after irradiation with electrons at 0.5–2.5 MeV energies. The irradiation was done at [Formula: see text] K and the irradiation dose was varied from [Formula: see text] to [Formula: see text]. An enhancement of the charge carriers localization with increase of the irradiation dose has been revealed. A crossover from the pseudogap (PG) regime to the variable-range hopping conductivity has been observed.

Metal–insulator transition and variable-range hopping conductivity of n-CdSb in magnetic field

2007 ◽  
Vol 68 (2) ◽  
pp. 272-279 ◽  
Author(s):  
R. Laiho ◽  
A.V. Lashkul ◽  
K.G. Lisunov ◽  
E. Lähderanta ◽  
M.O. Safonchik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Insulator Transition ◽  
Variable Range Hopping ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Hopping Conductivity ◽  
Variable Range

Variable-range hopping conductivity in thin film of the ladder compound [Ca1+δCu2O3]4

2003 ◽  
Vol 94 (9) ◽  
pp. 5912-5917 ◽  
Author(s):  
K. G. Lisunov ◽  
B. Raquet ◽  
H. Rakoto ◽  
J. M. Broto ◽  
E. Arushanov ◽  
...  
Keyword(s):  
Thin Film ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

scholarly journals Strong correlation between electronic bonding network and critical temperature in hydrogen-based superconductors

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Francesco Belli ◽  
Trinidad Novoa ◽  
J. Contreras-García ◽  
Ion Errea
Keyword(s):  
Critical Temperature ◽  
Physical Properties ◽  
Fermi Level ◽  
Electronic Properties ◽  
Density Of States ◽  
Strong Correlation ◽  
Critical Temperatures ◽  
Structural And Electronic Properties ◽  
Superconducting Compounds ◽  
Better Than

AbstractBy analyzing structural and electronic properties of more than a hundred predicted hydrogen-based superconductors, we determine that the capacity of creating an electronic bonding network between localized units is key to enhance the critical temperature in hydrogen-based superconductors. We define a magnitude named as the networking value, which correlates with the predicted critical temperature better than any other descriptor analyzed thus far. By classifying the studied compounds according to their bonding nature, we observe that such correlation is bonding-type independent, showing a broad scope and generality. Furthermore, combining the networking value with the hydrogen fraction in the system and the hydrogen contribution to the density of states at the Fermi level, we can predict the critical temperature of hydrogen-based compounds with an accuracy of about 60 K. Such correlation is useful to screen new superconducting compounds and offers a deeper understating of the chemical and physical properties of hydrogen-based superconductors, while setting clear paths for chemically engineering their critical temperatures.

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