Optical properties of twinning superlattices in diamond-type and zinc-blende-type semiconductors

1995 ◽  
Vol 52 (19) ◽  
pp. 14078-14085 ◽  
Author(s):  
Z. Ikonic ◽  
G. P. Srivastava ◽  
J. C. Inkson
2015 ◽  
Vol 252 (4) ◽  
pp. 670-677 ◽  
Author(s):  
C. M. Duque ◽  
A. L. Morales ◽  
M. E. Mora-Ramos ◽  
C. A. Duque

2015 ◽  
Vol 29 (20) ◽  
pp. 1550103
Author(s):  
Jinhui Zhai ◽  
Jinguang Zhai ◽  
Ajun Wan

The electronic and optical properties of zinc-blende (zb)[Formula: see text]GeC have been investigated using first principles calculations based on the density functional theory (DFT). The obtained band gap of zb–GeC is 2.30[Formula: see text]eV by means of Heyd–Scuseria–Ernzerhof (HSE) functional. We have discussed the energy-dependent optical functions including dielectric constants, refractive index, absorption, reflectivity, and energy-loss spectrum in detail. The results reveal that zb–GeC has a higher static dielectric constant compared with that of zb–SiC. The optical functions are mainly associated with the interband transitions from the occupied valence bands (VBs) Ge[Formula: see text][Formula: see text] and C[Formula: see text][Formula: see text] states to Ge[Formula: see text][Formula: see text], [Formula: see text] and C[Formula: see text][Formula: see text] states of the unoccupied conduction bands (CBs).


2013 ◽  
Vol 29 (05) ◽  
pp. 929-936 ◽  
Author(s):  
GUO Lei ◽  
◽  
HU Ge ◽  
FENG Wen-Jiang ◽  
ZHANG Sheng-Tao ◽  
...  

2016 ◽  
Vol 30 (6) ◽  
pp. 1533-1538 ◽  
Author(s):  
Abdelghani Khaldi ◽  
Hatem Ghodbane ◽  
Nadir Bouarissa ◽  
Saleh Daoud ◽  
Zahir Rouabah ◽  
...  

2020 ◽  
Vol 98 (9) ◽  
pp. 834-848
Author(s):  
H. Rekab-Djabri ◽  
Mohamed Drief ◽  
Manal M. Abdus Salam ◽  
Salah Daoud ◽  
F. El Haj Hassan ◽  
...  

In this work, first principle calculations of the structural, electronic, elastic, and optical properties of novel AgBr1–xIx ternary alloys in rock-salt (B1) and zinc-blende (B3) structures are presented. The calculations were performed using the full-potential linear muffin-tin orbital (FP-LMTO) method within the framework of the density functional theory (DFT). The exchange and correlation potentials were treated according to the local density approximation (LDA). The lattice constants for the B1 and B3 phases versus iodide concentration (x) were found to deviate slightly from the linear relationship of Vegard’s law. The calculated electronic properties showed that AgBr1–xIx alloys in the B3 structure have a direct band gap (Γ – Γ) for all concentrations of x, which means that they can be used in long-wavelength optoelectronic applications, while in the B1 structure they have an indirect (Γ – R) band gap. The elastic constants Cij, shear modulus G, Young’s modulus E, Poisson’s ratio ν, index of ductility B/G, sound velocities vt, vl, and vm, and Debye temperature θD were also reported and analyzed. By incorporating the basic optical properties, we discussed the dielectric function, refractive index, optical reflectivity, absorption coefficient, and optical conductivity in terms of incident photon energy up to 13.5 eV. The present results were found to be in good agreement with the available experimental and other theoretical results.


Author(s):  
Heidrun Sowa

In order to find a transition path from the zinc-blende to the NaCl type both structures are described with the aid of heterogeneous sphere packings. If all atoms in such crystal structures are replaced by like ones, atomic arrangements result that correspond to homogeneous sphere packings belonging to the diamond type or forming a cubic primitive lattice, respectively.It is shown, that a diamond configuration may be deformed into a cubic primitive lattice within the Wyckoff position Imma 4(e) mm2 0,¼,z. The corresponding phase transition in binary compounds from the zinc-blende to the NaCl type can be described as a deformation of a heterogeneous sphere packing in the subgroup Imm2 of Imma. Since no bonds have to be broken this type of transition is displacive.In addition, structural relations between high-pressure phases of semiconductors like silicon and germanium and related AB compounds are shown.


1998 ◽  
Vol 23 (2) ◽  
pp. 453-465 ◽  
Author(s):  
F. Benkabou ◽  
J.P. Becker ◽  
M. Certier ◽  
H. Aourag

Rare Metals ◽  
2014 ◽  
Vol 33 (5) ◽  
pp. 615-621 ◽  
Author(s):  
Sahar Rezaee ◽  
Arash Boochani ◽  
Masoud Majidiyan ◽  
Atefeh Ghaderi ◽  
Shahram Solaymani ◽  
...  

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