Determination of the electron effective-mass tensor in 4HSiC

1996 ◽  
Vol 53 (23) ◽  
pp. 15409-15412 ◽  
Author(s):  
D. Volm ◽  
B. K. Meyer ◽  
D. M. Hofmann ◽  
W. M. Chen ◽  
N. T. Son ◽  
...  
Keyword(s):  
Effective Mass ◽  
Electron Effective Mass ◽  
Mass Tensor

Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN

1995 ◽  
Vol 34 (Part 2, No. 9B) ◽  
pp. L1178-L1179 ◽  
Author(s):  
M. Drechsler ◽  
D. M. Hofmann ◽  
B. K. Meyer ◽  
T. Detchprohm ◽  
H. Amano ◽  
...  
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Electron Effective Mass ◽  
Band Electron ◽  
Conduction Band Electron

Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass

1990 ◽  
Vol 68 (5) ◽  
pp. 2367-2375 ◽  
Author(s):  
D. M. Szmyd ◽  
P. Porro ◽  
A. Majerfeld ◽  
S. Lagomarsino
Keyword(s):  
Effective Mass ◽  
Electron Effective Mass ◽  
Heavily Doped

On the Determination of Electron Effective Mass in 2DEGs in Gallium Nitride HEMT Structures

2014 ◽  
pp. 99-101
Author(s):  
Manna Kumari Mishra ◽  
Rachna Manchanda ◽  
Sushil Lamba ◽  
O. P. Thakur ◽  
R. K. Sharma ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Effective Mass ◽  
Electron Effective Mass

Optical determination of the electron effective mass of strain compensated In0.4Ga0.6As0.995N0.005∕GaAs single quantum well

2006 ◽  
Vol 89 (17) ◽  
pp. 171112 ◽  
Author(s):  
LiFang Xu ◽  
D. Patel ◽  
C. S. Menoni ◽  
J. Y. Yeh ◽  
L. J. Mawst ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Single Quantum ◽  
Electron Effective Mass ◽  
Single Quantum Well ◽  
Optical Determination

Conductivity Measurements on GaN Grown by OMVPE and HVPE

1995 ◽  
Vol 395 ◽  
Author(s):  
M. Ben-Chorin ◽  
J. Diener ◽  
B.K. Meyer ◽  
M. Drechsler ◽  
D. Volm ◽  
...  
Keyword(s):  
Effective Mass ◽  
Cyclotron Resonance ◽  
Epitaxial Films ◽  
Precise Determination ◽  
Conductivity Measurements ◽  
Electron Effective Mass ◽  
Thermally Activated ◽  
Mass Approximation ◽  
Donor Binding Energy

ABSTRACTWe report on conductance and cyclotron resonance (CR) experiments on GaN epitaxial films grown by the OMVPE and HVPE techniques. From a precise determination of the electron effective mass the donor binding energy in the effective mass approximation (EMT) is calculated. We obtain 31.7 meV. The transport experiments on the HVPE films show that the conductance is thermally activated with an activation energy of 15 meV in contrast to the OMVPE films which showed temperature independent conductivity for temperatures between 4 and 100 K.

Plasma Edge Reflectance Measurements in GaxIn(1−x)As and InAsxSb(1−x) Alloys

1971 ◽  
Vol 49 (15) ◽  
pp. 2052-2060 ◽  
Author(s):  
Mathew B. Thomas ◽  
John C. Woolley
Keyword(s):  
Experimental Data ◽  
Relaxation Time ◽  
Effective Mass ◽  
Conduction Band ◽  
Room Temperature ◽  
Plasma Edge ◽  
Electron Effective Mass ◽  
Reflectance Measurements ◽  
Type Conduction

Room temperature measurements of plasma reflectance have been made on polycrystalline homogeneous n type samples of GaxIn(1−x) As and InAsxSb(1−x) alloys. An analysis for the case of general degeneracy in a Kane-type conduction band has been developed, to allow the determination of electron effective mass (m0*/m) at the bottom of the conduction band. Hence values of m0*/m vs. x have been determined for both alloy systems. From the experimental data, values of relaxation time and optical mobility have also been calculated.

Direct determination of electron effective mass in GaNAs/GaAs quantum wells

2000 ◽  
Vol 77 (12) ◽  
pp. 1843 ◽  
Author(s):  
P. N. Hai ◽  
W. M. Chen ◽  
I. A. Buyanova ◽  
H. P. Xin ◽  
C. W. Tu
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Direct Determination ◽  
Electron Effective Mass
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