Electron and phonon states in an ideal continuous random network model ofa−SiO2glass

1999 ◽  
Vol 59 (5) ◽  
pp. 3540-3550 ◽  
Author(s):  
Ming-Zhu Huang ◽  
Lizhi Ouyang ◽  
W. Y. Ching
Keyword(s):  
Network Model ◽  
Random Network ◽  
Continuous Random Network

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Evidence for the Compensated Continuous Random Network Model for Spodumene Glass and Analogues

1996 ◽  
Vol 228-231 ◽  
pp. 537-542 ◽  
Author(s):  
M.C. Jermy ◽  
G.N. Greaves ◽  
M.E. Smith ◽  
G. Bushnell-Wye ◽  
A.C. Hannon ◽  
...  
Keyword(s):  
Network Model ◽  
Random Network ◽  
Continuous Random Network

Analysis of the Si-ON-Insulator Structure by Modeling of the Interface Atomic Arrangement

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Saito ◽  
Y. Yamakoshi ◽  
I. Ohdomari
Keyword(s):  
Network Model ◽  
Random Network ◽  
Interface Energy ◽  
Atomic Arrangement ◽  
Bond Stretching ◽  
Distortion Energy ◽  
Bond Distortion ◽  
Bond Bending ◽  
Continuous Random Network ◽  
Type Potential

ABSTRACTA structure of interface between crystalline Si (c-Si) and underlying SiO2 film formed by Si-on-Insulator technique has been analyzed by modeling of interface atomic arrangement. A ball-and-spoke model of a stoichiometrically abrupt c-Si/SiO2 interface has been constructed by connecting a (100) c-Si lattice and a continuous random network model of amorphous SiO2 . A Keating-type potential has been used for the interatomic interactions. The bond bending distortion energy of both Si and O atoms increases at the interface, while the bond stretching energy is negligibly small. The amount of interface energy due to bond distortion is 0.20J/m2.

scholarly journals Properties of a Continuous-Random-Network Model for Amorphous Systems

1998 ◽  
Vol 81 (22) ◽  
pp. 4899-4902 ◽  
Author(s):  
Yuhai Tu ◽  
J. Tersoff ◽  
G. Grinstein ◽  
David Vanderbilt
Keyword(s):  
Network Model ◽  
Random Network ◽  
Amorphous Systems ◽  
Continuous Random Network

A continuous random network model with three-fold coordination

1974 ◽  
Vol 29 (5) ◽  
pp. 1201-1206 ◽  
Author(s):  
G. N. Greaves ◽  
E. A. Davis
Keyword(s):  
Network Model ◽  
Random Network ◽  
Continuous Random Network

Densification of a continuous random network model of amorphous SiO2glass

2014 ◽  
Vol 16 (4) ◽  
pp. 1500-1514 ◽  
Author(s):  
Neng Li ◽  
Ridwan Sakidja ◽  
Sitaram Aryal ◽  
Wai-Yim Ching
Keyword(s):  
Network Model ◽  
Random Network ◽  
Continuous Random Network
Sign in / Sign up

Export Citation Format

Share Document