scholarly journals Propagating mode-I fracture in amorphous materials using the continuous random network model

2011 ◽  
Vol 84 (2) ◽  
Author(s):  
Shay I. Heizler ◽  
David A. Kessler ◽  
Herbert Levine
1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.


1999 ◽  
Vol 59 (5) ◽  
pp. 3540-3550 ◽  
Author(s):  
Ming-Zhu Huang ◽  
Lizhi Ouyang ◽  
W. Y. Ching

1996 ◽  
Vol 228-231 ◽  
pp. 537-542 ◽  
Author(s):  
M.C. Jermy ◽  
G.N. Greaves ◽  
M.E. Smith ◽  
G. Bushnell-Wye ◽  
A.C. Hannon ◽  
...  

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Saito ◽  
Y. Yamakoshi ◽  
I. Ohdomari

ABSTRACTA structure of interface between crystalline Si (c-Si) and underlying SiO2 film formed by Si-on-Insulator technique has been analyzed by modeling of interface atomic arrangement. A ball-and-spoke model of a stoichiometrically abrupt c-Si/SiO2 interface has been constructed by connecting a (100) c-Si lattice and a continuous random network model of amorphous SiO2 . A Keating-type potential has been used for the interatomic interactions. The bond bending distortion energy of both Si and O atoms increases at the interface, while the bond stretching energy is negligibly small. The amount of interface energy due to bond distortion is 0.20J/m2.


1999 ◽  
Vol 5 (S2) ◽  
pp. 682-683
Author(s):  
J.M. Gibson ◽  
M.M.J. Treacy ◽  
P.M. Voyles

When I (JMG) began my Ph.D. studies under the supervision of Archie Howie in 1975, he was still licking his wounds over one of the very few apparently incorrect publications[l] of his career. I am proud that our recent work has shown that, far from being wrong, Archie and Lee Rudee were actually 25 years before their time. It was in the early 1970’s that electron microscopy instrumentation reached the performance level that was adequate to resolve the interplanar spacings in elemental materials, such as the semiconductors silicon and germanium. It immediately became of interest to examine the structure of amorphous silicon and germanium, in the expectation that direct imaging could resolve the old controversy between micro-crystallite and random network structural models. Porai-Koschits was the first to suggest that amorphous materials comprised extremely small crystalline domains (microcrystals), in contrast Zachariasen[2] proposed that a continuous random network was a better description of glassy materials.


1998 ◽  
Vol 81 (22) ◽  
pp. 4899-4902 ◽  
Author(s):  
Yuhai Tu ◽  
J. Tersoff ◽  
G. Grinstein ◽  
David Vanderbilt

1974 ◽  
Vol 29 (5) ◽  
pp. 1201-1206 ◽  
Author(s):  
G. N. Greaves ◽  
E. A. Davis

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