Analysis of the Si-ON-Insulator Structure by Modeling of the Interface Atomic Arrangement
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ABSTRACTA structure of interface between crystalline Si (c-Si) and underlying SiO2 film formed by Si-on-Insulator technique has been analyzed by modeling of interface atomic arrangement. A ball-and-spoke model of a stoichiometrically abrupt c-Si/SiO2 interface has been constructed by connecting a (100) c-Si lattice and a continuous random network model of amorphous SiO2 . A Keating-type potential has been used for the interatomic interactions. The bond bending distortion energy of both Si and O atoms increases at the interface, while the bond stretching energy is negligibly small. The amount of interface energy due to bond distortion is 0.20J/m2.
1996 ◽
Vol 228-231
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pp. 537-542
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2016 ◽
Vol 120
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pp. 15362-15368
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1998 ◽
Vol 81
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pp. 4899-4902
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1974 ◽
Vol 29
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pp. 1201-1206
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