Stimulated emission due to spatially separated electron-hole plasma and exciton system in homoepitaxial GaN

2004 ◽  
Vol 69 (24) ◽  
Author(s):  
K. Kazlauskas ◽  
G. Tamulaitis ◽  
A. Žukauskas ◽  
T. Suski ◽  
P. Perlin ◽  
...  
2021 ◽  
Author(s):  
Carmelita Rodà ◽  
Bastiaan B.V. Salzmann ◽  
Isabella Wagner ◽  
Yera Ussembayev ◽  
Kai Chen ◽  
...  

Nano Letters ◽  
2021 ◽  
Author(s):  
Carmelita Rodà ◽  
Bastiaan B. V. Salzmann ◽  
Isabella Wagner ◽  
Yera Ussembayev ◽  
Kai Chen ◽  
...  

2011 ◽  
Vol 222 ◽  
pp. 110-113
Author(s):  
Edmundas Kuokstis

Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.


1998 ◽  
Vol 108 (4) ◽  
pp. 199-204 ◽  
Author(s):  
N Ben Brahim Aouani ◽  
L Mandhour ◽  
R Bennaceur ◽  
S Jaziri ◽  
T Amand ◽  
...  

2016 ◽  
Vol 109 (22) ◽  
pp. 221106 ◽  
Author(s):  
A. Minj ◽  
M. F. Romero ◽  
Y. Wang ◽  
Ö. Tuna ◽  
M. Feneberg ◽  
...  

1973 ◽  
Vol 15 (2) ◽  
pp. 711-720 ◽  
Author(s):  
V. N. Dobrovolskii ◽  
M. N. Vinoslavskii ◽  
O. S. Zinets

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